MMBD3004A Datasheet, PDF (2/3 Pages) Diodes Incorporated – HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE

WILLAS ^FM120-M+
HIGH VOLTAGE SURFACE MOUNT
1.0_SA_WSU_IR_TF_CAC_HE_IM_NO_GUN_DT_IS_OC_DHO_ETTKY BARRIER RECTIFIERS
-20V-
MMBD3004A ^THRU
200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
50^b0^{etter reverse leakage current and thermal resistance.}
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
•⁴⁰H⁰igh current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
•30U0ltra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
20^M0^{IL-STD-19500 /228}
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
100
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0
,
•
Term₀ inals
:Plated
termina₁l₀s₀, solderable
per
MIL-STD-750
200
Method 2026
T_A, AMBIENT TEMPERATURE, (°C)
• Polarity_Fi:_gI_.n₁dic_Pa_ot_we_ed_r b_Dy_ec_raa_tt_inh_god_Ce_urb_va_en_, d_{total package}
• Mounting Position : Any
1000
• Weight : Approximated 0.011 gram
Package outline
1000
100
10
1.0
SOD-123H
T_j = 150°C
0.146(3.7)
0.130(3.3)
T_j = 25°C
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.1
0.01 ^{0.031(0.8) Typ.}
0
400
800
1200
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
1600 2000
V_F, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 2 Typica^Dl ⁱF^mo^erⁿw^sia^orⁿd^{s i}Cⁿhⁱⁿa^cr^ha^ec^ste^anri^dst⁽i^mcs^ill,^imp^ee^tr^ere^sl⁾ement
1.1
100 ^{MAXIMUM RATTINj =G15S0°CAND ELECTRICAL CHARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
1.0
Single p₁h₀ase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
1.0
Marking Code
RATINGS
T_j = 75°C
Maximum Recurrent Peak Reverse Voltage
Maximum⁰R^.1MS Voltage
T_j = 25°C
Maximum DC Blocking Voltage
Maximu0m.0A1verage Forward Rectified Current
SYMBOL FM120-MH FM130-M₀H_.9FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200 Vo
VRMS
14
21
28
35
42
0.8
VDC
20
30
40
50
60
56
70
105
140 ^Vo
80
100
150
200 ^Vo
IO
1.0
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superim⁰p^.0o⁰se¹d₀on rate₅d₀load (₁J₀E₀DEC ₁m₅e₀thod₂) _{00 250}
IFSM
300 350
0.7
30
0.01
0.1
1.0
10
100
Am
Typical Thermal Resistance (Note 2)
RΘJA
V_R, REVER⁴S⁰E VOLTAGE (V)
℃
Typical JunctioVn_RC, IaNpSacTiAtaNncTeA(NNEoOteU1S) REVERSE VOLTACGJ E (V)
Fig. 4 Typic1a2l0Total Capacitance
P
Operating Te^Fm^igp^.e³rat^Tu^yre^piR^ca^an^l g^Re^{everse Characteristics, pe}T^rJ^element
-55 to +125
vs. Reverse Voltage, per _-e₅le₅m_toen₊t₁₅₀
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
0.50
0.70
0.85
0.9
0.92 Vo
IR
0.5
mA
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.