MMBD3004A Datasheet, PDF (1/3 Pages) Diodes Incorporated – HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE

WILLAS ^FM120-M+
HIGH VOLTAGE SURFACE MOUNT
1.0_SA_WSU_IR_TF_CAC_HE_IM_NO_GUN_DT_IS_OC_DHO_ETTKY BARRIER RECTIFIERS
-20V-
MMBD3004A ^THRU
200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• ^FLo^Ew^Ap^Tro^Ufi^Rle ^Esurface mounted application in order to
op_·ztim_Fi_az_se_tb_So_war_id_tcs_hp_ia_nc_ge_S. _peed
•
•
HLoi^·g^zwhpHcou^iwgrr^heernCltoocsⁿas^dp, ah^uibcgtihl^ait^neyc,ffl^{eiocwiefnocryw.} ard
voltage
drop.
• Hi·gzhHsuigrgheRceavpearbsileityB. reakdown Voltage Rating
• Gu_zar_Wdri_eng_defo_cr_lao_rv_ee_tr_hv_ao_tlt_ta_hg_ee_mpr_ao_tt_ee_rc_iati_lo_on_f. _product
• Ultra choigmhp-slipaenecde swwitihtchRionHg.S requirements.
• Sil_zicoMnoeipsittauxrieal Spleannasritcihviipty, mLeetavleslil1icon junction.
• Le_Oad_r-_dfr_eee_rip_na_grts_Im_ne_foet_re_mnv_air_to_in_om_ne₍n_Pt_bal_-s_ft_ra_en_ed₎ards of
MIL-STD-19500 /228
• RoHS prodDuecvt fiocrepacking codeMsaurffkixin"Gg"
Shipping
Hal₀og_Men_Bfre_De₃p₀ro₀d₄u_Act for packing_Kc_Aod_De suffix "H"_{3000/Tape&Reel}
Me_Pc_b-h_Fa_ren_ei_pc_aa_ckl_ad_ga_e t_isa_available
• Ep_Ro_ox_Hy _S: U_pL_r9_o4_d-_uV_c0_t r_fa_ot_re_pd_af_cla_km_ine_gre_cota_dr_eda_sn_ut_{ffix ”G”}
• Ca_Hs_ae_lo: _gM_eo_nld_fe_red_epl_pa_rs_ot_dic_u, _cS_tO_foD_r-1_p2_a3_cH_{king code suffix “H”}
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
SOD-123H
0.146(3.7)
0.130(3.3)
1
3
0.012(0.3) Typ.
2
SOT –23
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
ANODE
3
1
CATHODE
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
2
CATHODE
• Polarity : Indicated by cathode band
• Mo^Mun^ati^xnⁱg^mP^uos^mitio^Rn :^aA^tnⁱⁿy ^{gs @ TA=25℃ unless otherwise specified}
Dimensions in inches and (millimeters)
• Weight : ApproximateCd h0a.0r1a1ctgerraismtic
Symbol
Value
Unit
Repe_Mtiti_Av_Xe P_IMea_Uk _MRe_Rve_Ars_Te _IV_No_Glta_Sge_{AND ELECTRICAL CHA}V_RR_AR_CM_TERISTICS 350
V
Ratings at 2^W5^o℃^rkiaⁿm^gb^Pie^ean^kt t^Rem^evp^ee^rr^sa^etu^Vr^oe^ltu^an^gl^eess otherwise specified.
VRWM
300
V
Single phasDeChaBlflowcakvineg, 6V0oHltza,greesistive of inductive load.
VR
For capacit_Riv_Me l_Soa_Rd_e,_vd_ee_rr_sa_ete_Vocu_ltr_ar_ge_ent by 20%
VR(RMS)
212
V
Forward C^Ron^At^Tin^INuo^Gu^Ss Current(Note 2) ^{SYMBOL FM120-MH FM130-M}IF^{H FM140-MH FM150-MH}22^FM5^{160-MH FM180-MH FM}m¹A^{100-MH FM1150-MH FM1200-MH UN}
Marking Code
12
Maximum Re^Pc^eu^ar^kre^Rnt^eP^pe^ea^tik^tiR^veev^Fe^ors^re^wV^aro^dlta^Cg^ue^{rrent(Note 2)}VRRM
20
13
14
30^IFRM 40
15
16
50 ⁶²⁵60
18
10
80
m₁A₀₀
115 120
150
200 Vo
Maximum RM^NS^onV^-o^Rlt^ea^pg^ee^{titive Peak Forward Surge Curr}V^eRⁿM^t S ^@t=11^.4^0µs
Maximum DC Blocking Voltage
VDC @t=12.00s
21_IFSM 28
30
40
35 ^4.0 42
50 1.0 60
56
A⁷⁰
80
100
105
140 ^Vo
150
200 ^Vo
Maximum Av_Pe_ora_wg_ee_rF_Do_ir_sw_sa_iprd_atR_ioe_nct₍i_Nfie_od_teC₂u₎rrent
IO
Pd
350 ^1.0
mW
Am
Peak ForwardTShuerrgme aCluRrrenstis8t.a3nmces sJiunnglcetihoanlf tsoinAe-mwabvieent A_IFi_Sr_M(Note 2)
R0JA
357 ₃₀
℃/W
Am
superimposed_Oo_pn_er_ra_at_te_id_ngloa_ad_nd(JE_SD_toE_rC_agm_ee_Tth_eo_md)_{perature Range}
Tj, TSTG
-65 to +150
℃
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/
Typical Junction Capacitance (Note 1)
CJ
120
P
Operating TeEmlpeecratturriecRaalnCgeharacteristics @ TAT=J 25℃ unless^-5o⁵t^th^oe⁺r¹w²i⁵se specified, per element
-55 to +150
℃
Storage Temperature Range_{Characteristic}
TSTG_{Symbol Min Typ MAX Unit}- 65 to +_T1_e7_s5_{t Condition}
℃
Reverse_CHB_Are_Ra_Ak_Cd_To_Ew_Rn_ISV_To_Il_Cta_Sge(Note 1)
Maximum Forward Voltage at 1.0A DC
Maximum Av_Fe_ora_rwge_arR_dev_Ve_or_ls_te_agC_eu₍r_Nre_on_tt_ea₁t ₎ @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBO^VL^(BF^RM⁾1^R20-MH³⁵F⁰M130-MH FM140-MH FM150-MH^VFM160^I-^RM⁼H¹F⁰M⁰1^µ8^A0-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
00..7580 0.87 0.70 IF=20mA 0.85
0.9
0.92 Vo
IR ^VF
0.93
1.0
V I⁰F^.=⁵100mA
mA
10
1.03 1.25
IF=200mA
NOTES:
1- Measured aRt e1vMeHrsZeaCndurarpepnlite(dNroetveer1s)e voltage of 4.0 VDC.
IR
2- Thermal Resistance From Junction to Ambient
Total Capacitance
CT
30
100 nA VR=240V
35
100 µA VR=240V, Tj=150℃
1.0
5.0 Pf VR=0V, f=1.0MHZ
Reverse Recovery Time
Trr
IF=IR=30mA
50
ns
Irr=3.0mA, RL=100Ω
Notes: 1. Short duration test pulse used to minimize self-heating effect.
2012-06
2. Part mounted on FR-4 board with recommended pad layout.
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.