MMBD2004SW Datasheet, PDF (2/3 Pages) Diodes Incorporated – SURFACE MOUNT SWITCHING DIODE

WILLAS ^FM120-M+
SOT-323 Plastic-Encapsulate
1.0A SURFACE MOUNT SCHOTTKY BARRIER
Diodes
RECTIFIERS
-20V-
MMBD2004SW_THRU
200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
Typical Characteristics ^{optimize board space.}
• Low power loss, high efficiency.
0.146(3.7)
0.130(3.3)
• High current capability, low forward voltage drop.
0.012(0.3) Typ.
• High surge capa_Fb_oil_rit_wy_a. _{rd Characteristics}
• G200uardring for overvoltage protection.
Reverse Characteristics
1000
• U100ltra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
100
• R¹o⁰HS product for packing code suffix "G"
T_a=100℃
Halogen free product for packing code suffix "H"
Mechanical data
10
• Ep¹ oxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.1
Method 2026
0.031(0.8) Typ.
1
T =25℃
a
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
0.01
• We^0.0ight : Ap^0.p² roxima^0.t⁴ed 0.01⁰1^.6 gram ^0.8
1.0
1.2
0.1
0.1
FORWARD VOLTAGE V_F (V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1
10
REVERSE VOLTAGE V_R (V)
100
250
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
5
C_Rap_Aa_Tc_Ii_Nta_Gn_Sce
Characteristics
Pe_Sr _YD_Mio_Bd_Oe_L
FM120-MH
FM130-MH
F₃M₀₀140-MH
FM150-MH
Power Derating Curve
FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
Marking Code
T_a=25℃₁₂
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
f=1MHz
VRRM
20
30
40
50
60
250
80
100
150
200 Volt
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^Volt
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
1
VDC
20
30
40
50
60
80
100
150
200 ^Volt
200
IO
1.0
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
150
100
-55 to +125
50
30
40
120
- 65 to +175
-55 to +150
Am
℃/W
PF
℃
℃
0.1
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM0140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Maximum For⁰ward Voltag⁴e at 1.0A D⁸C
12
V¹F⁶
20
REVERSE VOLTAGE V (V)
Maximum Average Reverse Current at @T A=25℃^R
IR
0.50 ⁰
25 _0.70 50
7₀5 _.85
100
AMBIENT TEMPERATURE T (℃)
0.5
j
0.9 ¹²⁵
0.92 Volt
mAm
Rated DC Blocking Voltage
@T A=125℃
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.