MMBD2004SW Datasheet, PDF (1/3 Pages) Diodes Incorporated – SURFACE MOUNT SWITCHING DIODE

WILLAS
FM120-M+
MMBD2004SW_THRU
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
SWITC^bH^eI^tN^teG^{r re}D^vI^eO^rsD^e E^{leakage current and thermal resistance.}
FEAT^•U^LoR^opE^wtimS^{pirzoefibleosaurdrf}
ace mo
space.
unted
applic
at
ion
i
n
order
to
SOD-123H
SOT-323
CMSD^•2^L0^ow04^pS^owt^ey^rp^le^osi^ss^{, h}a^igs^hil^eic^ffo^icn^iesⁿw^cyi^.tching dual in series diode
manuf^••a_HHc_iit_ggu_hhre_scuud_rrgrb^eey^nctt_ach_pae_apbae_iblp_iitlyiⁱt^t.a^y,x^loia^wl ^fp^ol^ra^wn^aa^rdr ^vp^or^lo^tac^ge^es^ds^r,^opd^.esigned for
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
applic•aGtiouanrsdrriengqufoirrionvgerhvioglthagveopltraogteectcioanp. ability. Power dissipation
Pb-Fre^• e^Up^{l t r}a^ac^hkⁱa^{g h}g^-e^{s p}is^{e e}a^dv^sa^wilⁱ a^{t c}b^hlⁱe^{n g .}
RoHS^•p^Sro^ild^icu^ocⁿt^ef^poⁱr^tap^xa^iac^lk^pin^lag^nac^ro^cd^he^ips^,u^mff^eix^ta”^lG^si”^{licon junction.}
• Lead-free parts meet environmental standards of
Halogen_Mf_Ir_Le_-e_STp_Dro_-1d₉u₅c₀t₀fo_/2r₂p₈acking code suffix “H”
Moistu•rReoSHSenpsroidtiuvcittfyorLpeavckeilng1code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.071(1.8)
0.056(1.4)
1
3
2
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
MARKING : B6D
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Maxim_•u_Pm_olaR_ria_tyti_:n_Ing_ds_ic@_ateT_dAb=_y2_c5_a℃_{thode band}
Dimensions in inches and (millimeters)
Param^• e^Mt^oe^ur^{nting Position : Any}
• Weight : Approximated 0.011 gram
Non-Repetitive Peak reverse voltage
Symbol
V_RM
Limit
300
Unit
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DC Blocking
Ratings at 25℃
Voltage
ambient
temperature
unless
otherwis^Ve ^Rspecified.
240
V
PSeinagkleRpheapseetihtaivlfewCavuer,r6e0nHt z, resistive of inductive loaI_Od.
225
mA
For capacitive load, derate current by 20%
Continuous Forward Current
RATINGS
M^Pa^er^aki^kng^RC^eo^pd^ee^{titive Forward Current}
I_F
225
mA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
I_FRM
12
13
14
6₁2₅ 5
16
18
10 ^mA115
120
M_Fa_ox_rim_wu_am_rdR_Sec_uu_rrr_ge_ent_CP_uea_rk_reR_ne_tve_tprs₌e₁Vo_μl_stage
Maximum RMS Voltage
M^Fa^ox^rim^wu^am^rdD^SC^uB^rlo^gc^ekin^Cg^uV^ro^reltaⁿg^te^{tp=1 s}
V_IFR_SR_MM
20
30
40
5₄0_.0 60
VRMS
14
21
28
35
42
V^IFD^SC^M
20
30
40
1₅.₀0
60
80
100
A¹⁵⁰
200 Volts
56
70
105
140 ^Volts
80
100 ^A 150
200 ^Volts
M_Pa_ox_wim_eu_rm_DA_iv_se_sra_ipg_ae_tF_ioor_nward Rectified Current
P^IOd
250
1.0
mW
Amp
P_Je_ua_nk _cFo_tir_owa_nrd_teS_murg_pe_eC_ru_ar_tr_uen_rt_e8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
T^Sy^tp^oic^ra^al ^gT^ehe^tr^em^mal^pR^ee^rs^ais^tt^uan^rece^r(^aNⁿo^gte^e2)
IFTSJM
R^TSΘ^TJ^GA
150
30
-55~+150 ₄₀
℃
Amp
℃
℃/W
Typical Junction Capacitance (Note 1)
CJ
120
PF
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
S_Eto_Lra_Eg_Ce T_Te_Rmp_ICer_Aatu_Lre_CR_Han_Age_{RACTERISTICS (Ta}T₌S₂T₅G_{℃ unless otherwise specified)} - 65 to +175
℃
CHARACTERISTICS
Maximum Forwa^Prd^arV^ao^mlta^eg^te^ea^rt 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Ra^Rte^ed^vD^eC^rsB^elo^bck^ri^en^ag^kV^do^olta^wge^{n voltage} @T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF^Symbol
Test_0.50conditions _0.70 Min
0^M.8^a5^x
U₀n_.i₉t
0.92 Volts
IR _V(BR)
I_R= 100μA
0.5
2₁4₀0
V
mAmp
NORTEeSv:erse voltage leakage current
I_R
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- TFhoerrmwaal rRdesvisotalntacegFerom Junction to Ambient
V_F
V_R=240V
I_F=100mA
0.1
mA
1
V
Diode capacitance
C_D
V_R=0V,f=1MHz
5
pF
Reveres recovery time
t_rr
I_F=I_R=30mA,R_L=100Ω
50
ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.