HER801 Datasheet, PDF (2/2 Pages) Rectron Semiconductor – HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes)

WILLAS
8.0A HIGH EFFICIENCY RECTIFIERS - 50V-1000V
1.0A SURFACE MOUNT SCHOTTK_TY_OB_-2A₂R₀R_AIE_PR_AR_CE_KC_AT_GIFI_EERS -20V- 200V
SOD-123+ PACKAGE
HE_T^F_HR^M_R8_T¹_U0_H²1_R⁰_U^-M+
HE^FMR8¹0²8^00-M+
Pb Free Product
Features
FIG. 1-TY•PBICatAcLhFpOroRcWesAsRdDeCsiUgRn,ReExNcTelDleEnRt ApToIwNeGr CdiUsRsiVpEation offers
better reverse leakage current and thermal resistance.
10_{• Low profile surface mounted application in order to}
optimize board space.
• Low power loss, high efficiency.
8_{• High current capability, low forward voltage drop.}
• High surge capability.
6^{• Guardring for overvoltage protection.}
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
4• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
2 Halogen free product for packing code suffix "H"
Mechanical data
0^{• Epoxy : UL94-V0 rated flame retardant}
•⁰Case : M²⁵olded p⁵la⁰stic, SO⁷⁵D-123H¹⁰⁰
125
150
,
• Terminals :P_Ala_Mte_BId_ENte_Trm_TEi_Mna_Pl_Es_R, _As_To_Uld_Re_Er₍a_℃b₎le per MIL-STD-750
Method 2026
Package outline
FIG. 2-TYPICAL FORWARD CHARACTERISTICS
100.00
SOD-123H
10.00
TJ=25℃ PULSE
WIDTH 300us ^0.146(3.7)
2% DUTY ^0.130(3.3)
CYCLE
0.012(0.3) Typ.
1.00
0.071(1.8)
0.056(1.4)
HER801~HER803
0.10
HER804~HER805
HER80⁰6^.~⁰⁴H⁰E⁽¹R^.08⁾ 08
0.024(0.6)
0.01
0.031(0₀.8_.6) Typ. _0.8
1.0
1.2
1.4^0.031(0.8)1^T.^y6^p.
1.8
FORWARD VOLTAGE (V)
• Polarity : Indicated by cathode band
FIG. 3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
Dimensions in inches and (millimeters)
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
• Mounting Position : Any
150
100
• Weight : Approximated 0.011 gram
25℃
125
MAXIMUM
RATTJI=N25G℃ S8.3mAsND
Single Half
ELECTRICAL
CHARACTERIST₁₀ICS
Ratings at 25℃ ambient temperaturSeineunWleavses otherwise specified.
Sing¹le⁰⁰phase half wave, 60Hz, resistiv^Je^EDo^Ef^Cinductive load.
For capacitive load, derate current by 20%
1
100℃
75
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maxim⁵u⁰m Recurrent Peak Reverse Voltage
12
13
14 ^0.1 15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200 Volts
Maximum RMS Voltage
Maxim²u⁵m DC Blocking Voltage
VRMS
14
21
28 _0.01 35
42
VDC
20
30
40
50
60
56
70
105
140 ^Volts
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
0
IO
Peak Forwa¹rd Surge Current 8.3 ms singl¹e⁰half sine-wave _IFSM
100
superimposed on rated l_Noa_Ud_M(_BJE_ED_RE_OC_Fm_Ce_Yth_Co_Ld_E)_{S AT 60Hz}
Typical Thermal Resistance (Note 2)
RΘJA
0.001
20
1.0
40
60
80
100
30
PERCENTAGE RATED PEAK REVERSE VOLTAGE (%)
40
Amps
Amps
℃/W
Typical Junction Capacitance (Note 1)
F_OIG_pe. _r5_a-_tT_inY_gP_TIC_emA_pL_eJ_raU_tN_urC_eT_RI_aO_nN_geCAPACITANCE
Storage12T0emperature Range
100
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum₈₀Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
CJ
120
PF
TJ
-55 to +12^F5^{IG. 6-Reverse Recovery Time Chara}-^c5^t5^ertⁱo^st+^ic1^a5ⁿ0^{d Test Circuit}
℃
TSTG
50W
NONINDUCTIVE
- ^10W
NONINDUCTIVE
65
to
+175
+0.5A
trr
|
℃
|
|
|
SYMBOL
VF
FM120-MH
FM130-MH F₍₊M₎ 140-MH FM150-MH FM160-MH
0.5025Vdc
(approx.)
D.U.T.
0.70
FM180-M(H) FM1100-MH
0
0.85 ^PULSE
GENERATOR
FM1150-MH^||
0.9
|
|
FM1200-MH
0.92
UNIT
Volts
IR
()
1W
NON-
INDUCTIVE
0.5
OSCILLISCOPE
10 ^{(NOTE 1)}
(NOTE 2)
(+)
-0.25A
mAmp
NOTES: ⁶⁰
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Therma⁴l⁰Resistance From Junction to Ambient
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
20
0
0
1
10
100
2012-06
REVERSE VOLTAGE (V)
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.