HER801 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes)

WILLAS
8.0A HIGH EFFICIENCY RECTIFIERS - 50V-1000V
1.0A SURFACE MOUNT SCHOTTK_TY_OB_-2A₂R₀R_AIE_PR_AR_CE_KCT_AIF_GIE_ERS -20V- 200V
SOD-123+ PACKAGE
HE_T^F_HR^M_RT8¹_HU0²1_R⁰_U^-M+
H^FE^MR¹8²0⁰8^0-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Feature^• s^{Low profile surface mounted application in order to}
optimize board space.
‧Low fo_•r_Lw_oa_wrd_pv_oo_wlt_ea_rg_loe_sd_sr_,o_hp_{igh efficiency.}
‧High c•uHrriegnhtccuarrpeanbtilcitaypability, low forward voltage drop.
‧High r^•e^Hlia^igb^hili^sty^{urge capability.}
‧High s^••u_UGrg_lute_raarc^dhu^rir^ignr_he^g-n_sft^opc^rea^oep^vda^esb^rvwil^oi_it_tly_ctahginegp. ^rotection.
‧High s_•p_Se_ie_lid_cos_nw_eit_pc_ih_tain_xg_{ial planar chip, metal silicon junction.}
SOD_T-1_O23_-H_220A
.129(3.3)
.1(2.54)
0.146(3.7)
0.130(3.3)
.413(10.5)
.153(3.9)
.146(3.7)
.374(9.5)
.270(6.90)
.230(5.80)
.187(4.82)
.⁰1^.4⁰¹8²(⁽3⁰.^.38⁾0^T)^yp.
.053(1.4)
.043(1.1)
0.071(1.8)
0.056(1.4)
‧AEC-Q• L1e0a1dq-ufraeleifipeadrts meet environmental standards of
‧Moistur^Me^ILS^-e^Sn^Ts^Dit^-i¹v⁹it⁵y⁰L⁰e^/2v²e⁸l 1
‧Pb-Fre^•e^Rp^oa^Hc^Sk^pa^rg^oe^duis^cta^fv^orai^pl^aa^cb^kle^{ing code suffix "G"}
Halogen free product for packing code suffix "H"
RoHS product for packing code suffix ”G”
Mechanical data
Halogen free product for packing code suffix “H”
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
Mecha^•n^Ti^ec^ra^mlⁱⁿD^aa^lste^{:Plated terminals, solderable per MIL-STD-750}
‧Case:TO-220A ^{Method 2026}
‧Case^• M^Poa^lt^ae^rrⁱi^ta^yl:^: M^Ino^dlⁱd^ce^ad^teP^d l^ba^yst^cic^a.^thU^oL^{de band}
. 0 4 7 MA X.
(1.2)
.057(1.45)
0.031(0_.0.8₄) ₆Ty₍p₁._.16)
.624(15.87)
.578(14.70)
.177(4.50)
.140(3.56)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.039(1.00)
.023(0.60)
.583(14.8)
.531(12.7)
Dimensions in inches and (millimeters)
.028(0.70)
.014(0.36)
Flam^•m^Ma^ob^uilⁿit^tyⁱⁿC^gla^Ps^os^siⁱf^tic^ioaⁿti^:o^AnⁿR^yating 94V-0
.102(2.60)
‧Term^•in^Wa^elsⁱ:^gL^hte^:a^Ad^pF^pr^re^oe^xiP^ml^aa^tt^ein^dg⁰(^.T⁰i¹n¹F^gi^rn^ais^mh).
.091(2.30)
.126
( 3. 20 )
Solderable p_Mer_AM_XI_IL_M-S_UT_MD-_R20_A2_T, _IM_Ne_Gth_Sod_A2_N0_D8 _{ELECTRICAL CHARACTERISTICS}
‧_RaW_tine_gig_sh_at_t: ₂1₅._℃ 89 g_amra_bm_ies_nt(a_tep_mp_pro_erx_aim_tura_ete_u)_{nless otherwise specified.}
Dimensions in inches and (millimeters)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^Volts
MAX^MIM^axU^imM^umR^DA^CT^BI^lN^ocG^kinS^{g V}(T^olA^ta=^ge25°C unless otherw^Vis^DCe note²d⁰) ³⁰
40
50
60
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
PARAMETER
IO
SYMBOL
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
Maximsuupmerimreppoesetidtiovneraptedakloardev(JeErDsEeCvmolettahgode)
V_RRM
Maxim^Tyu^pm^icaR^l M^ThS^ermvo^alt^Rag^ese^{istance (Note 2)}
Maxim^Tyu^pm^icaD^{l J}C^unb^cl^to^iocⁿki^Cn^ag^pav^co^itl^ataⁿg^cee^{(Note 1)}
Operating Temperature Range
Maxim_Su_tom_raga_ev_Te_era_mg_pe_erf_ao_tur_rw_ea_Rr_ad_nr_ge_ectified current
V_RR_MΘ_SJA
V_D^C_C ^J
TJ
I_TFSTG
HER
801
50
35
50
HER
802
100
70
-55 ¹to⁰+⁰125
HER
803
200
140
200
HER
804
300
210
300
1_H.0_ER
3⁸0⁰⁵
400
4₂0₈₀
12₄0₀₀
8_-.₆0_{5 to +175}
HER HER
806
807
600
800
420
560
600
800
-55 to +150
HER
808
1000
700
1000
Amps
UNIT
Amps
V
V ^℃/W
V ^PF
℃
A_℃
Peak forward surge current, 8.3ms single half
sine-wave superimpos^Ce^Hd^Ao^Rn^Ar^Ca^Tte^Ed^RIl^So^Ta^Id^CS
Maximum Forward Voltage at 1.0A DC
Maxim_Mu_am_ximIn_umsta_An_veta_ran_ge_eo_Ru_es_veF_rso_erw_Ca_urr_rd_enV_t o_atlta_@ge_{T A=25℃}
IF=8A_R@_ated25_D°_CC_{Blocking Voltage}
@T A=125℃
I_{SFYSMMBOL FM120-MH FM130-MH FM140-MH FM150-MH} 1_FM2₁5₆.₀0_{-MH FM180-MH FM1100-MH FM1150-MH FM1200-M}A_{H UNIT}
VF
0.50
0.70
0.85
0.9
0.92 Volts
V_FIR
1.00
1.35^0.5
10
1.75
V _mAmps
Maximum DC Reverse Current @ Tc=25°C
at Ra^Nte^Od^TED^SC^: Blocking Voltage @ Tc=100°C
I_R
10
uA
20
mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Typical Junction Capacitance(NOTE1)
2- Thermal Resistance From Junction to Ambient
C_j
75
pF
Maximum Reverse Recovery Time(NOTE2)
Trr
50
75
ns
Typical Thermal Resistance
R_θJC
3
°C/W
Operating Temperature Range
T_J
-55 to +150
°C
Storage Temperature Range
T_STG
NOTES:1.Measured at 1.0MHZ and applied reverse voltage of 4.0V DC
2.Measured with IF=0.5A, IR=1A, IRR=0.25A
2012-06
-55 to +150
°C
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.