DTA114EUA Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Digital Transistors

WILLAS ^FM120-M+
1.0^PA S^NU^PRF^DAC^igE M^itO^aU^lN^TT^rS^aCⁿHO^sTⁱT^sK^tY^oB^rARRIER
RECTIFIERS
-20V-
DTA114EUA ^THRU
200V
FM1200-M
SOD-123+ PACKAGE
Features ^{Typical CharacteriPsatcikcagse outline}
• Batch process_Od_Nes_Ci_hg_an_r,_ae_ctx_ec_re_isl_tle_icn_st power dissipation offers
-100 _{better reverse leakage current and thermal resistance.}
-10
• Low profile surface mounted application ^Vin^O=o^-0r^.3d^Ver to
OFF Characteristics
SOD-123H
Pb Free Produc
optimize board space.
-30 _{• Low power loss, high efficiency.}
-3
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
-10 ^{• High surge capability.}
-1
• Guardring for overvoltage protection.
• Ultra high-speed switching.
-3 _{• Silicon epitaxial planar chip, me}T_taa=_l25_s℃_{ilicon junction.}
-0.3
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
T_a=100℃
-1
-0.1
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
T_a=100℃
T_a=25℃
0.071(1.8)
0.056(1.4)
-0.3 Mechanical data
-0.03
• Epoxy : UL94-V0 rated flame retardant
• -0.1
-0.1
Case_-0.:₃ Molded_-1plastic_-,₃SOD-12_-13₀ H
-30
-100
-0.01
-0.0
,
• Terminals :^OP^Ula^TPte^UTd ^Cte^URrm^REin^NTals^I,_O so^(mld^Ae⁾ rable per MIL-STD-750
0.0-03.14(0.8) Typ. -0.8
-1.2
INPUT VOLTAGE V_I(OFF) (V)
0.040(1.0)
0.024(0.6)
V_CC=-5V
-1.6
0.031-(20.0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position^G:_I A^—ny^{— I}_O
1000
-1000
• Weight : Approximated 0.011 gram
V_O=-5V
Dimensions in inches and (millimeters)
V_O(ON) —— I_O
I_O/I_I=20
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
-300
Sing10l0e phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
30
Marking Code
RAT^TaI⁼N¹G⁰⁰S^℃
T_a=25℃
Maximum Recurrent Peak Reverse Voltage
10
Maximum RMS Voltage
Maximum DC Blocking Voltage
3
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM1-31000-MH FM140-MH FM150-MH FM160-MH ^TF^aM⁼¹1⁰8⁰0^℃-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
VRRM
20
30
40
50
60
18 T_a=25℃10
80
100
115 120
150
200
VRMS
14
21
28
35
42
-30
VDC
20
30
40
50
60
56
70
105
140
80
100
150
200
IO
1.0
Peak F1orward Surge Current 8.3 ms single half sine-wave
-0.1
-0.3
-1
-3
-10
-30
IFSM
-100
superimposed on rated load (JEDEC method)
OUTPUT CURRENT I_O (mA)
Typical Thermal Resistance (Note 2)
RΘJA
-10
-1
-3
-10³⁰
-30
-100
OUTPUT CURRENT I_O (mA)
40
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Stora₁g₂e Temperature Range ^{CO —— VR}
CHARACTERISTICS
Maxim¹⁰um Forward Voltage at 1.0A DC
CJ
120
TJ
TSTG
-55 to +125
400
P_{D - 6}—₅—_{to +}T_1a75
-55 to +150
f=1MHz
SY^TM^a=2B⁵O^℃L FM120-MH FM13305-0MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
300
0.5
Rated⁸DC Blocking Voltage
@T A=125℃
10
250
NOTES:
1- Mea⁶sured at 1 MHZ and applied reverse voltage of 4.0 VDC.
DTA114EUA
200
2- Thermal Resistance From Junction to Ambient
150
4
100
2
50
0
0
4
8
12
16
20
2012-06
REVERSE BIAS VOLTAGE V_R (V)
2012-0
0
0
25
50
75
100
125
150
AMBIENT TEMPERA_WTU_IR_LE _LT_{Aa S}(℃)_{ELECTRONIC COR}
WILLAS ELECTRONIC CORP.