DTA114EUA Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Digital Transistors

WILLAS ^FM120-M
1.0^PA^NSU^PRF^DAⁱC^gEⁱM^taO^lUN^TT^rS^aCⁿH^sOⁱT^sTK^toY ^rBARRIER
RECTIFIERS
-20V-
DTA114EUA ^THRU
200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
Features^{optimize board space.}
•
• Low power loss, high efficiency.
Pb-Fre_•e_Hp_iga_hc_ck_ua_rrg_ee_nti_cs_aa_pav_ba_ii_ll_ita_yb_{, l}l_oe_{w forward voltage drop.}
RoHS •pHroigdhuscut rfgoer cpaapcakbiniligty.code suffix ”G”
Haloge^•n^Gf^ure^are^drpⁱⁿro^gd^fou^rc^ot^vf^eo^rr^vp^ola^tac^gk^ein^pg^roc^teo^cd^te^ions^.uffix “H”
• Epoxy ^•m^Ue^lte^rats^hU^igL^h-9^sp4^eV^ed-0^swflⁱa^tcm^him^nga^.bility rating
•
•
B^Mu^oilⁱt^s-^uin^{r••e}b^LSi^Sa^eileas^icdnor^-e^snfris^teeii^vs^epit^itpto^yaar^xs^rLitasee^lvmn^pea^lealb^en1l^tae^ernt^ch^vhe^iripoc^,no^mmn^eef^tiⁿg^atlu^asr^lia^slit^tci^ao^onn^ndjao^urf^ndca^stn^ioofiⁿn^.verter circuit
without_• c_R^Mo_o^In_H^Ln^-_S^Se_p^Tc_r^Dt_oin_d^-1_ug_c⁹_te⁵_fx⁰_ot⁰_re_p^/r²_an_c²a_k⁸l_ini_gnp_cou_dt_ere_sus_fi_fs_ixto_"Grs_"
• The bias_Hr_ae_los_gis_et_no_fr_rs_eec_po_rn_ods_uis_ct_{t f}o_of_r t_ph_ai_cn_k-_if_nil_gm_cor_de_es_sis_ut_fo_fixrs_"Hw_"ith complete
isolatio_Mn t_eo_cal_hlo_aw_nn_ie_cg_aat_liv_de_ab_tia_asing of the input. They also have the
advantage of almost completely eliminating parasitic effects.
• Only th^•e^Eo^pn^o/^xo^yff^: c^Uo^Ln⁹d⁴i^-t^Vio⁰n^rs^atn^ee^de^fld^amto^e b^ree^tas^re^dt^afⁿo^tr operation, making
device ^•d^Ces^ai^sg^en^: e^Ma^os^ldy^{ed plastic, SOD-123H}
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Package outline
SOD-123H
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
.010(0.25⁰)^.024(0.6)
.003(0.08)
0.031(0.8) Typ.
Method 2026
Absolute_•m_Pa_ox_lai_rm_ityu_:m_Indr_ia_ct_ai_tn_eg_d s_by@_ca2_th5_oк_{de band}
Symbol
Parameter
VCC ^• S^Mu^opp^ulⁿy^tvⁱⁿo^glta^Pg^oe^{sition : Any}
Min Typ Max Unit
--- -50 ---
V
.087(2.20)
Dimensions in inches and (millimeters)
.070(1.80)
VIN • IWnpeuitgvhotlt:aAgepproximated 0.011 gram -40 --- 10
V
IO
IC(MAX)
Pd
Output
current
MAXIMUM
RATINGS
AND
-_E--_LEC-T^-150_R⁰⁰_ICA-_L--
mA
CHARACTERISTICS
Power dissipation
--- 200 --- mW
T^Rj ^{atings a}Ju^t n²c⁵t^℃ion ^ate^mm^bp^ieeⁿra^tt^tu^er^me ^{perature unless other}-^w--^{ise sp}1^e5^c0^ified. ---
ć
TSstgingle phSatosreaghealtfewmapveer,a6tu0rHe z, resistive of inductiv-e55load. --- 150
ć
For capacitive load, derate current by 20%
Marking Code
RATINGS
.056(1.40)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
.047(1.20)
12
13
14
15
16
18
10
115 120
Ele^Mct^ar^xi^imc^ua^ml C^Reh^ca^urr^ra^enc^tt^Pe^er^ai^ks^Rti^ec^ves^rs@^{e V}2^o5^ltaк^ge
VRRM
Sy^Mm^ab^xo^iml ^{um RMS Voltage} Parameter
Min^VRMSTyp
V^MI(o^aff^x) ^imumI^Dnp^Cu^Bt v^loo^cl^ktaⁱⁿg^ge^V(V^ol_C^ta_C=^g-^e5V, I_O=-100­A)
-0.5VDC ---
V_MI(o_an_x) _{imum Average Forw}(_aV_rdO=_R-0_e._c3_tiV_fi,_edI_O=_C-_u1_r0_rem_nA_t )
VO(on)
Output voltage (IO/II=-10mA/-0.5mA
--- _IO ---
---
---
P^Ie^I ak Forw^Iaⁿr^pd^uS^tu^cr^uge^rreCⁿu^trr⁽e^Vn^It⁼8^-5.3^Vm⁾ s single half
IO_s(_uo_pff)_erimposO_eu_dtp_ou_nt_rac_tu_er_dre_lon_at_d(V_(JC_EC_D=-_E5_C0V_m,_eV_thI=_od0₎)
sine-wave
---
--- ^IFSM
---
---
GI
DC current gain (VO=-5V, IO=-5mA)
30 ---
T_Ry₁pical Th_Ie_nr_pm_ua_t l_reR_se_issi_ts_at_na_cn_ece (Note 2)
7.0^RΘJA 10
R^T2/^yR^p1^{ical Ju}R^nce^ts^ioisⁿta^Cn^ac^pe^ar^ca^itt^aio^{nce (Note 1)}
0.8 ^CJ 1.0
OS_{fTtpoeraragteinTg}T(_eTVmrea_Opmn=_espr_-iaet1i_tro0_uanV_rteu,frrI_Ree_{O=qaR5unamegn}n_eAgce_,yf=100MHz)
--- ^TJ 250
TSTG
20
30
40
14_Max 21_Unit 28
20 --- 30 V 40
-3.0
V
-0.3
V
-0.88 mA
-0.5 ­A
---
13
K¡
1.2
--- ^{-55 to}M⁺H¹z²⁵
50
60
80
100
150
200
35
42
56
70
105
140
50
60
80
100
150
200
.004(0.10)MAX.
1.0
30
.016(0.40)
40 ^.008(0.20)
120
-55 to +150
Dimens_-io₆n₅s_toin₊i₁n₇c₅hes and (millimeters)
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70Suggested So0.l8d5er
0.9
0.92
Maximum Average Reverse Current at
Rated DC Blocking Voltage
@T A=25℃
@^MT^AA=^R1^K2^I5^N℃^{G: 14}
IR
P₀a_.5d Layout
0.70₁₀
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.90
1.90 mm
2012-06
2012-0
0.65
0.65
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.