DTA114ECA Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – Digital Transistor

WILLAS
FM120-M+
DTA114ECA^THRU
1.0^PA^NSU^PRF^DAC^igE ⁱM^tO^aU^lN^TT^rS^aCⁿHO^sTⁱT^sK^tY^oB^rARRIER RECTIFIERS -20V- 200V
FM1200-M+
Features
SOD-123+ PACKAGE
Typical Characte_Pr_acis_kat_gic_e s_outline
• Batch process d_Oe_Ns_Cig_hn_a,_re_acx_tc_ee_ril_sle_tin_ct_spower dissipation offers
-100 _{better reverse leakage current and thermal resistance.}
-10
• Low profile surface mounted application in^VOo^=-r⁰d^.3e^Vr to
OFF Characteristics
SOD-123H
Pb Free Product
optimize board space.
-30 _{• Low power loss, high efficiency.}
-3
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
-10 ^{• High surge capability.}
-1
• Guardring for overvoltage protection.
• Ultra high-speed switching.
-3 _{• Silicon epitaxial planar chip, met}T_aal=_s25_il℃_{icon junction.}
-0.3
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
T_a=100℃
-1
-0.1
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
T_a=100℃
T_a=25℃
0.071(1.8)
0.056(1.4)
-0.3 Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• -0.1
-0.1
C
as
e
-^:0.^M3 ^o
l
de
d
-^p1 ^l
a
s
ti
c
,
-^S3
O
D
-
1
2
3_-1H₀
-30
-100
,
• Terminals :P^Ol^Ua^Tte^PUd^Tt^Ce^Urm^RRin^ENa^Tls,^I_Oso⁽l^md^Ae⁾rable per MIL-STD-750
-0.03
-0.01
-0.0
0.03-10(.40.8) Typ. -0.8
-1.2
INPUT VOLTAGE V_I(OFF) (V)
0.040(1.0)
0.024(0.6)
V_CC=-5V
-1.6
0.031(0-2.8.0) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position^G: A_I n^—y ^{— I}_O
1000
-1000
• Weight : Approximated 0.011 gram
V_O=-5V
Dimensions in inches and (millimeters)
V_O(ON) —— I_O
I_O/I_I=20
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
-300
Sing1le00phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
30
Marking Code
RAT^TIN^a=G¹⁰S^0℃
T_a=25℃
Maximum Recurrent Peak Reverse Voltage
10
Maximum RMS Voltage
Maximum DC Blocking Voltage
3
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-1-0M0 H FM140-MH FM150-MH FM160-MH F^TM^a=1¹8⁰0⁰-^℃MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
VRRM
20
30
40
50
60
18 T_a=251℃0
80
100
115 120
150
200
VRMS
14
21
28
35
42
-30
VDC
20
30
40
50
60
56
70
105
140
80
100
150
200
IO
1.0
Peak Fo1rward Surge Current 8.3 ms single half sine-wave
-0.1
-0.3
-1
-3
-10
-30^IFSM
-100
superimposed on rated load (JEDEC method)
OUTPUT CURRENT I_O (mA)
Typical Thermal Resistance (Note 2)
RΘJA
-10
-1
-3
-³10⁰
-30
-100
OUTPUT CURRENT I_O (mA)
40
Typical Junction Capacitance (Note 1)
CJ
120
Operating Temperature Range
Storag₁e₂ Temperature Range ^{CO —— VR}
CHARACTERISTICS
Maxim¹u⁰m Forward Voltage at 1.0A DC
TJ
TSTG
-55 to +125
400
P_{D- 65}—_t—_{o +1}T_7a5
-55 to +150
f=1MHz
SYM^TaB⁼²O⁵L^℃FM120-MH FM1303-5M0H FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
300
0.5
m
Rated D⁸ C Blocking Voltage
@T A=125℃
10
250
NOTES:
1- Meas⁶ured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
4
DTA114ECA
200
150
100
2
50
0
0
4
8
12
16
20
2012-06
REVERSE BIAS VOLTAGE V_R (V)
2012-0
0
0
25
50
75
100
125
150
AMBIENT TEMPER_WATU_ILRE_LAT_{a S}(℃_E) _{LECTRONIC CORP}
WILLAS ELECTRONIC CORP.