DTA114ECA Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – Digital Transistor

WILLAS
FM120-M+
DTA114ECA THRU
PNP Digital Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
Featuresoptimize board space.
• Low power loss, high efficiency.
• Pb-F^•re^He^igp^ha^cc^urk^ra^eng^te^cais^paa^bv^ilia^tyi^,la^lob^wle^{forward voltage drop.}
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
RoHS^{• H}pⁱr^go^hd^su^uc^rgt ^efo^cr^app^aa^bcⁱk^liti^yn^.g code suffix ”G”
• Guardring for overvoltage protection.
Halog_•e_Un_ltrf_are_he_ighp_-r_so_pd_eu_ec_dt_sf_wo_ir_tcp_ha_inc_gk_. ing code suffix “H”
• Epoxy_{• S}m_ile_ice_ot_ns_eU_piL_ta9_x4_ialV_p-_la0_nf_ala_r m_chm_ipa_{, m}bi_eli_tt_ay_l r_sa_ilt_ii_cn_og_{n junction.}
• Moisu_•r_Le_eS_ade_-n_frs_ei_etiv_pi_aty_rtsL_mev_ee_el_t 1_{environmental standards of}
• Built-in^Mb^Ii^La^-s^Sr^Te^Ds^-i¹s⁹to⁵r⁰s⁰e^/2n²a⁸ble the configuration of an inverter circuit
witho^•ut^Rc^oo^Hn^Sn^pe^roc^dti^un^cg^{t fo}e^rx^pte^acrn^kia^ngl i^cn^op^du^et^sr^ue^ffs^ixis^"t^Go^"rs
• The bia^Hs^alr^oe^gs^eiⁿst^fro^er^es^pc^roo^dn^us^ci^ts^ft^oo^{r p}f ^ath^ckinⁱⁿ-^gfil^cm^odr^ee^ss^ui^fs^fit^xo^"r^Hs^"with complete
isolati^Mon^et^co ^hal^aloⁿwⁱn^ce^ag^lat^div^ae ^tb^aiasing of the input. They also have the
advan_•t_Eag_poe_xo_yf_: a_Ul_Lm₉o₄s_-Vt ₀co_ram_tep_dle_flt_ae_mly_ee_rl_eim_tai_rn_da_at_nin_t g parasitic effects.
•
Odenvlyicte_•h_Ced_aeossneig/:on_Mffe_oca_ldos_eny_dd_pit_li_ao_sn_ts_ic,n_Se_Oed_D-t₁o₂b₃e_H
set
for
operation,
making
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
SOT-23
0.071(1.8)
.122(3.10) 0.056(1.4)
.106(2.70)
.080(2.04)
.070(1.78)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
Absolute
•
maximum ratings
Polarity : Indicated by
@ 25к
cathode band
Dimensions in inches and (millimeters)
Symbol
Parameter
VCC ^{• M}S^oup^upⁿl^tyⁱⁿv^golt^Pa^oge^{sition : Any}
Min Typ Max Unit
--- -50 ---
V
VIN • WInepiugthvto:ltAagpeproximated 0.011 gram -40 --- 10
V
IO
IC(MAX)
Output current
MAXIMUM
RATINGS
AND
E^--L^-ECT^--1R⁵⁰⁰⁰ICAL^--C^- HAR^mA^ACTERISTICS
Pd
Power dissipation
--- 200 --- mW
R_Ta_j tings a_Jt _u2_n5_c℃_tionam_teb_mie_pn_ert_ate_tum_reperature unless otherw_--is_- e spe₁c₅i₀fied. _---
ć
TSsitnggle phaSstoerahgaelf twemavpee,r6at0uHrez, resistive of inductive-5lo5ad. --- 150
ć
For capacitive load, derate current by 20%
Electrical CharacteRriAsTtIiNcGsS@ 25к
Marking Code
Sy_VMm_I(aob_fxf)o_iml _{um RInepcuutrvreonlttaPgeea(k}P_Va_RCr_Cea_=vm_-e5re_Vst_e,e_Ir_{VO=o-lt1a0g0e­A)}
V^MI(^aon^x)^{imum RMS Voltage}(V_O=-0.3V, I_O=-10mA)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
-^M0.^iV5^nRRM
Typ
---
20
Max
---
30^U_V^nit
40
50
60
--^V- ^RMS --- ¹⁴ -3.0 ²¹ V ²⁸
35
42
18 _.008(0.1₂0₀₎
80 _.003(0.1₀0₈0₎
56
70
115 120
150
200
105
140
V_MO_a(o_xn)_{imum D}O_Cut_Bpu_lot_cv_ko_inlt_gag_V= e_ol(_tI_aO_g/I_eI -10mA/-0.5mA
I^MO^I(^aoI f^xf)^{im= um A}OIn^vup^etu^rp^{atugcteucruFrero}rn^re^wtn(atV^r(^dIV^R-C⁵C^e= ^V=c-)^t5^if0^ieV^d,^CV^uI ^rr0^e)^nt
---_VDC --- ₂₀ -0.3 ₃₀ V ₄₀
50
60
80
100
150
200
---
--- -0.88 mA
--- ^IO ---
-0.5 ­A
.004(0.10)MAX¹. ^.0
P_RGe₁a^I k Forwa^DInrd^CpS_uctu^ur_rg^rere_seinC_sttu_agr_nr^ae_cin^net 8^(V.3^Om^=-s⁵s^V= in^, g^IOle h^-5a^mlf s^Ain⁾ e-wave
30
7.0^IFSM
---
10
R^s2^u/^pR^e1^rimposR^edes^oiⁿst^ra^an^tec^de^lora^at^dio^{(JEDEC method)}
0.8 1.0
T_fy_Tpical
Typical
TheTrrmanasl iRtioensisfrteanqcueen(Ncyote 2)
Jun^(Vct^Oio⁼n^-1C⁰a^Vp^,a^Ic^Oi⁼ta⁵n^mc^Ae^,(N^f=o¹t⁰e⁰1^M) ^Hz)
--^R- ^ΘJA 250
CJ
---
13
K¡
1.2
--- MHz
30
40 ^.020(0.50)
120 ^.012(0.30)
Operating Temperature Range
TJ
-55 to +125
-55 to +150
Storage Temperature Range
TSTG
Dim_-e₆n₅si_to_ons₊i₁n₇in₅ches and (millimeters)
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM16_S0-_uM_gH _gFM_e1_s8_t0_e-M_dH_SFM_o1_ld10_e0_r-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC _{MARKING: 14}VF
0.50
0.70
Pad La⁰y^.8o⁵ut
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0_..₀5₃₁
1^.0⁸⁰⁰
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.035
.900
.079
2.000
inches
mm
2012-06
2012-0
.037
.950
.037
.950
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.