DS751-40WB Datasheet, PDF (2/2 Pages) WILLAS ELECTRONIC CORP – WBFBP-02C Plastic-Encapsulate Diodes

WILLAS
FM120-M+
DS751-40WBTHRU
WB₁F_.0B_{A S}P_U-_R0_F2_ACC_{E M}P_Ol_Ua_Ns_Tt_Sic_CH-E_OTn_Tc_KYa_Bp_As_Ru_RIl_Ea_Rt_Re_ECD_Ti_IFo_IEd_Re_Ss_{-20V- 200V}
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
O u t l i n e D r a w i n g • Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
Package outline
W B F B P - 0 2 C ^SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
.017(0.45)REF.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suff.ix0"0H0" (0.01)REF.
Mechanical data
.018(0.45)
.012(0.30)
.014(0.35)
0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
. 0 1 0 ( 0 . 2 5 )^0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
y _{• Polarity : Indicated by cathode band}
r _{• Mounting Position : Any}
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
a _{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
in ^{Ratings at 25℃ ambient temperature unless otherwise specified.}
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATIN^.0G⁴S ^1(1.05)
.0016(0.400)REF.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
lim ^{Marking Code}
.037(0.95)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
VRMS 14 ^.021^04(0.2¹8 ⁰⁾ 35
42
18
10
115 120
80
100
150
200
56
70
105
140
e _{Maximum DC Blocking Voltage}
VDC
20 .03000(0.400 1) 50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
r _{Peak Forward Surge Current 8.3 ms single half sine-wave IFSM}
30
P _{superimposed on rated load (JEDEC method)}
Typical Thermal Resistance (Note 2)
RΘJA
40
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-11
Rev.B
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.