DS751-40WB Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – WBFBP-02C Plastic-Encapsulate Diodes

WILLAS
FM120-M+
DS751-40WBTHRU
WB₁F_.0AB_SP_U-_R0_FA2_CC_{E M}P_Ol_Ua_Ns_Tt_Si_Cc_H-_OE_Tn_TKc_Ya_Bp_As_RRu_IEla_Rt_Re_ECD_TIi_Fo_IEd_RSes_{-20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
Schottky b^•a^Brr^ai^te^cr^h D^pri^oo^cd^ee^{ss design, excellent power dissipation offers}
better reverse leakage current and thermal resistance.
DESCRIPT• ILOowNprofile surface mounted application in order to
Silicon epita^ox^pi^ta^iml p^izl^ea^bn^oa^ar^{rd space.}
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
Package outline
SOD-123H
WBFBP-02C
(1.0×0.6×⁰0^.1.⁴5⁶)^(3.7)
unit: mm ^0.130(3.3)
0.012(0.3) Typ.
FEATURE^•S^{High surge capability.}
z
• Guardring for overvoltage protection.
Small _•su_Ur_ltf_ra_ac_he_igm_h-o_spu_en_et_din_sg_wit_ty_cp_hie_ng.
z Low re^•v^Se^ilrⁱs^ce^onc^eu^prⁱr^tae^xn^iat ^la^pn^lad^nalo^r w^chif^po^,r^mw^ea^tard^{l s}v^ilo^icl^otaⁿg^jue^nction.
0.071(1.8)
0.056(1.4)
z High re^• l^LMia^eIb^aLd-il_S-it^fTry^{eDe-1p9a5rt0s0m/2e2e8t environmental standards of}
• RoHS product for packing code suffix "G"
APPLICAT_MI^HO_e^aN^l_c^og_h^en_a^fr_n^ee_ic^pr_a^od_l^u_d^ct
for
at
packing
a
code
suffix
"H"
High speed switching for detection
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
For portab_•le_Cae_sq_eu_:ip_Mm_ole_den_dt:_p(i_l._ae_s._tiM_c, o_Sb_Oi_Dle_-1p₂h_3Hone,MP3, MD,CD-ROM,
DVD-ROM_•,_TN_ero_mte_inab_lo_s o_:Pk_laP_teC_d,_tee_rt_mc_i._n)_als,
solderable
per
MIL-S
,
TD-750
Pb-Free packageMisethaovda20il2a6ble
0.031(0.8) Typ.
0.031(0.8) Typ.
y _{RoHS pro• dPoulcartitfyo:rInpdiacactkeidnbgy ccaothdoedesbuanffdix ”G”}
Dimensions in inches and (millimeters)
r Halogen •frMeoeunptirnogdPuoscittiofon r: Apnay cking code suffix “H”
• Weight : Approximated 0.011 gram
a _{MARKING: 5 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
in ^{Ratings at 25℃ ambient temperature unless otherwise specified.}
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Maximum
Ratings
and Electrical
RATINGS
Characteristics, Single Diode @Ta=25℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
FM1200-MH
lim ^{Marking Code}
12
13
14
15
16
Maximum Rec^Pu^arr^re^an^mt P^ee^ta^ek^rReverse Voltage
Symb_Vo_Rl_RM
20
30
40 ^Limits50
60
18
10
115 120
80
100^Unit 150
200
Pea^Mk^axrⁱe^mv^ue^mrs^Re^Mv^So^Vlt^oa^ltg^age^e
Maximum DC Blocking Voltage
V_RM^VRMS
14
21
28 ₄₀ 35
42
VDC
20
30
40
50
60
56
70 _V 105
140
80
100
150
200
e _{DCMraexvimerusmeAvvoerlatagge eForward Rectified Current}
V_R ^IO
30
1.0
V
Pr ^MeaPsuen_paek^r_r^e_iFm^coprtwoif_sa^y_er^iddnSog_nurr^cgaeu_teC^r_d^rue_lorrⁿ_aedn^{tt(J8E.3DmECs sminegtlheohda)lf sine-wave IO IFSM}
30
30
mA
Pea^Tk^ypfⁱo^car^lw^Ta^herd^rms^au^{l R}rg^ese^isc^tauⁿr^cr^ee⁽n^Nt^{ote 2)}
Typical Junction Capacitance (Note 1)
I_FSM^RΘJA
CJ
150
40
mA
120
Operating Temperature Range
Pow_Ste_or_rad_geis_Ts_ei_mpa_pt_ei_ro_atn_{ure Range}
P_DTS^T_T^J_G
-55 to +125
100
-55 to +150
- 65 to +175
mW
Thermal Resistance from
Junction to Ambien^Ct^{HARACTERISTICS}
RθJA
1000
℃/W
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Jun^Mc^at^xiⁱo^mn^umte^Fm^orp^we^ar^ra^dt^Vu^or^le^{tage at 1.0A DC}
T_j ^VF
Maximum Average Reverse Current at @T A=25℃
IR
Sto^Rra^atg^ede ^Dte^Cm^Bp^loe^ckrⁱaⁿt^gu^Vre^oltage
@T A=125℃ _Tstg
0.50 _15 0.70
0.5
0.85 _℃
0.9
0.92
-55~+150
10
℃
Elec^N1-Ot_Mr^Ti_eEc_aSa_s:ul_reR_d a_att₁in_Mg_HZs_a@_nd T_apa_p=_lie2_d5_re℃_{verse voltage of 4.0 VDC.}
2- Thermal Res_Pis_ata_rn_ac_me F_ero_tem_rJunction to Ambient _Symbol
Min
Typ
Max Unit
Conditions
Forward voltage
V_F
0.37
V
I_F=1mA
Reverse current
I_R
0.5
μA
V_R=30V
Capacitance between terminals
C_T
2012-06
2
pF
V_R=1V,f=1MHZ
WILLAS ELECTRONIC COR
2012-11
WILLAS ELECTRONIC CORP.