DS520-30WB Datasheet, PDF (2/2 Pages) WILLAS ELECTRONIC CORP – WBFBP-02C Plastic-Encapsulate Diodes

WILLAS
FM120-M
DS520-30WBTHRU
WB₁F_.0AB_SP_U-_R0_FA2_CC_{E M}P_Ol_Ua_Ns_Tt_Si_Cc_H-_OE_Tn_TKc_Ya_Bp_As_RRu_IEla_Rt_Re_ECD_TIi_Fo_IEd_RSe_-s_{20V- 200V}
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
Package outline
• Batch process design, excellent power dissipation offers
O u t l i n e D r a w i n g better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
W B F B P - 0 2 C ^SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
.017(0.45)REF.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.018(0.45)
Mechanical data
.000(0.01)REF.
.012(0.30)
. 0 1 4 ( 0 . 3 5 )0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
0.024(0.6)
.010(0.25)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
y _{• Polarity : Indicated by cathode band}
• Mounting Position : Any
r _{• Weight : Approximated 0.011 gram}
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
a _{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
in ^{Ratings at 25℃ ambient temperature unless otherwise specified.}
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RAT.I0N4G1S ( 1 . 0 5 )
.0016(0.400)REF.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
lim ^{Marking Code}
Maximum Recurrent Peak R^.e⁰ve³rs⁷e⁽V⁰o^.l⁹ta⁵ge⁾
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
VRMS 14 .02014(0.1280) 35
42
56
70
105
140
Maximum DC Blocking Voltage
e _{Maximum Average Forward Rectified Current}
VDC
20 _.0030_0(0.04₁0 ₎ 50
60
80
100
150
200
IO
1.0
r _{Peak Forward Surge Current 8.3 ms single half sine-wave IFSM}
30
P ^{superimposed on rated load (JEDEC method)}
Typical Thermal Resistance (Note 2)
RΘJA
40
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
Dimensions in inches and (millimeters)
Rev.B
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.