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DS520-30WB Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – WBFBP-02C Plastic-Encapsulate Diodes | |||
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WILLAS
FM120-M+
DS520-30WTBHRU
WBFBP-02C Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
⢠Batch process design, excellent power dissipation offers
Package outline
SCHOTTâ¢KLbYoewttBeprArroeRfvilReersIsEuerRlfeaacDkeIaOmgoeDucEnutrerdenatpapnlidcathtieornmianlorredseisr
tance.
to
SOD-123H
optimize board space.
DESCRIP⢠TLoIOw Npower loss, high efficiency.
Silicon Eâ¢piHtaigxhiaclurPrelannt caarpability, low forward voltage drop.
⢠High surge capability.
⢠Guardring for overvoltage protection.
WBFB0P.14-60(3.27)C
0.130(3.3)
(1.0Ã0.6Ã0.5)
unit: mm
0.012(0.3) Typ.
FEATURâ¢EUSltra high-speed switching.
Smalâ¢â¢l LSSeiulaicrdfo-anfrceeeepiMptaaxorituaslnmptlieanengtaerTncyvhpiripoe,nmmeetnatlaslislitcaonndjaurndcstioofn.
Low RMeIvLe-SrsTeD-1C9u50rr0e/n2t28and Low Forward Voltage
High â¢
RoHS product for packing code suffix "G"
RHealloiagebnilfirteye product for packing code suffix
"H"
0.071(1.8)
0.056(1.4)
Mechanical data
0.040(1.0)
APPLICA⢠TEIpOoxNy : UL94-V0 rated flame retardant
0.024(0.6)
High Speâ¢eCdaSsew: iMtcohldinegd pfolarstDice, tSeOcDti-o1n23H
,
For Portaâ¢bTleermEiqnaulisp:mPleantetd:(tie.erm. Minaolsb,ilseolPdehroanblee,pMePr M3I,LM-SDTD,C-7D5-0ROM,
y DVD-ROM, Note BoMoekthPodC2,0e2t6c.)
⢠Polarity : Indicated by cathode band
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
r Pb-Free⢠MpoaucntkinaggPeosiitsiona:vAaniylable
a RoHS pâ¢roWdeiugchtt:fAoprprpoaxicmkaitnedg0c.0o11dgerasmuffix âGâ
Halogen free MprAoXdIuMcUtMfoRrApTaINckGinSgANcoDdEeLEsuCfTfiRxICâHALâ CHARACTERISTICS
in Ratings at 25â ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
MAFRoKr cIaNpGac:itivEe load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
lim Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200 V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 V
e MaMxaximimuummDCRBalotcinkinggsVoaltnagde Electrical CharactVeDrCistics2,0Singl3e0Diode40@Ta=5205â 60
80
100
150
200 V
Maximum Average Forward Rectified Current
IO
1.0
A
r Peak Forward SurPgae rCaumrreentte8r.3 ms single half sine-waveSymIFbSMol
P superimposed on rated load (JEDEC method)
Value
Unit
30
A
DTCypriceavl eTrhseermvaol Rlteasgisetance (Note 2)
VRRÎJA
30
40
V
â
MTeypaincarl eJucntciftyioinnCgacpaucrirtaenncte (Note 1)
Operating Temperature Range
IOCTJJ
-55 to +125
100
120
-55 to +150mA
PSetoarkagfeorTwemaprderastuurregReacnguerrent
IFTSSMTG
500
- 65 to +175
mA
CHARACTERISTICS
JMuanxcimtiuomnFtoermwaprderVaotlutargee at 1.0A DC
Maximum Average Reverse Current at @T A=25â
SRtoatreadgDeCtBelmocpkienrgaVtuolrtaege
@T A=125â
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
TVj F
0.50
150 0.70
0.85
â 0.9
0.92 V
IR
Tstg
0.5
-55~+150
10
m
â
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
El2e- cThterrimcaal lReRsiasttainncegFsro@m JTunac=tio2n5toâAmbient
Parameter
Symbol Min Typ Max Unit
Conditions
Forward voltage
VF
0.45
V
IF=10mA
Reverse current
2012-06
IR
0.5
μA
VR=10V
WILLAS ELECTRONIC CORP
2012-11
WILLAS ELECTRONIC CORP.
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