DAN217U Datasheet, PDF (2/3 Pages) Rohm – Switching diode

WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
DAN217U^THRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Typical Characteristics • Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capaFboirliwtya,rldowCfohrawraacrtdervisotlitcasge drop.
100
• High surge capability.
0.146(3.7)
0.130(3.3)
Reverse Characteristics ^{0.012(0.3) Typ.}
1000
• Guardring for overvoltage protection.
• Ul3t0ra high-speed switching.
300
• Silicon epitaxial planar chip, metal silicon junction.
Ta=100℃
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
10
100
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
3
30
Mechanical data
• Ep₁oxy : UL94-V0 rated flame retardant
10
Ta=25℃
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Te_0.r₃minals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
3
0.031(0.8) Typ.
• Po_0.1larity : Indicated by cathode band
0.0
0.2
0.4
0.6
0.8
1.0
1.2
• Mounting Position : Any
FORWARD VOLTAGE V_F (V)
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
1
0
20
40
60
80
REVERSE VOLTAGE V_R (V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60_CH_apz,_ar_ce_its_ais_nt_civ_ee_Co_hf_ai_rn_ad_cu_tc_et_ri_iv_se_ticlo_sad.
For capacit¹i^.v⁴ e load, derate current by 20%
300
Ta=25℃
Power Derating Curve
RATINGS
SYMBOL^f=F¹M^M1^H2^z0-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Marking Code
12
13
25₁0 ₄
15
16
18
10
115 120
Maximum R1e.3current Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maximum RMS Voltage
VRMS
14
21
20²0 ⁸
35
42
56
70
105
140 ^Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximum Av_1.e₂rage Forward Rectified Current
IO
150
1.0
Amp
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
100
Amp
Typical Ther1m.1al Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
RΘJA
CJ
TJ
50
-55 to +125
40
120
-55 to +150
℃/W
PF
℃
Storage Temperature Range
1.0
0
5
TSTG
10
15
20
- 65 to +175
℃
0
0
25
50
75
100
125
150
CHARACTE_RR_EVIS_ET_RI_SC_ES_{VOLTAGE VR (}S_V)YMBOL FM120-MH FM130-MH FM140-MH FM150-MAHMFBMIE1N6T0-TMEHMPFEMR1A8T0U-MRHE FMTa110(0℃-M) H FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAm
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.