DAN217U Datasheet, PDF (1/3 Pages) Rohm – Switching diode

WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
DAN217U^THRU
FM1200-M+
Pb Free Product
SWITCH^FIN^eG^atuD^rI^eO^sDE
• Batch process design, excellent power dissipation offers
FEATURE^beS^{tter reverse leakage current and thermal resistance.}
z Sm^• a^Loll^ws^pu^rr^ofa^filc^ee^sum^rfo^acu^en^mtin^og^unt^ty^ep^de^{application in order to}
optimize board space.
z Tw^•o^Lod^wio^pd^oe^wee^rle^lom^sse^, n^ht^igs^ha^er^fe^ficc^ieoⁿn^cn^y.ected in series
z _Pb^••_{-HHFriiggehhescpuurragrecenkctaacgpaae}^pba_iibsliitlya^it.y_v^,_a^lo_il^w_ab^fo_l^r_e^{ward voltage drop.}
Ro•HGSuaprrdoridnugcfot rfoorvepravcokltaingge cproodteecstiuonff.ix ”G”
Ha^•lo^Ug^lte^ran^hfⁱr^ge^he^-sp^pr^eo^ed^du^sc^wt^itf^co^hrⁱⁿp^ga^.cking code suffix “H”
z Mo_••i_LSs_eit^lu_aicdr^oe_-nfrS_eeepeⁱn_ptaas^xri^itt^asi^lv_mpit^leay_entL^aere_ncv_vhe_iril^po,1_{nmmeetnatlaslislitcaonndjaurndcstioofn.}
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MARK_MIN_eG_c:_hA_a7_{nical data}
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOT-323
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
3
2
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Maximum Rating^Ms^eta^hn^odd²E⁰²le⁶ctrical Characteristics, Single Diode @Ta=25 ℃
• Polarity : Indicated by cathode band
Parameter
Symbol
• Mounting Position : Any
Dimensions in inches and (millimeters)
Limit
Unit
Peak r^•ev^We^erⁱs^ge^htv^:o^Alt^pa^pg^roe^{ximated 0.011 gram}
V_RM
80
V
DC reverse vo^Mlta^Ag^Xe^{IMUM RATINGS AND EL}V^E_R^{CTRICAL CHARACTERISTIC}8^S0
V
Ratings at 25℃ ambient temperature unless otherwise specified.
MSiangxliempuhmase(pheaalfkw)afvoer,w6a0Hrdz,cruesrirsetinvet of inductive loIa_Fd_M.
300
mA
For capacitive load, derate current by 20%
Average forward c_Ru_Arr_Te_In_Nt_GS
mA _SYMIO_BOL
FM120-MH
FM130-MH FM140-MH
100
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH FM1200-MH
UN
M_Sa_urk_rgin_eg C_co_ud_re_{rent (1μs)}
Maximum Recurren₍t₁P₀e_mak_sR₎ everse Voltage
Maximum RMS Voltage
MPaoxwimeurmdDisCsBiploactkiiongnVoltage
12
13
14
4¹0⁵ 0
16
V^IFRSRMM
20
30
40
10⁵⁰00
60
VRMS
14
21
28
35
42
V^PDDC
20
30
40
2500 0
60
18
10
115 120
80
100 mA150
200 Volt
56
70
105
140 ^Volt
80
100 mW150
200 ^Volt
Maximum Average Forward Rectified Current
Junction temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
s_Sup_toer_rim_agpo_ese_td_emon_pra_ete_rad _tlo_ua_rd_e(JEDEC method)
Typical Thermal Resistance (Note 2)
TOyppiecarlaJtuinncgtiotnemCappearcaitatuncree (rNaonteg1e)
Operating Temperature Range
Storage Temperature Range
IO
T_j
IFSM
T_stg
RΘJA
TC_oJ_pr
TJ
TSTG
-55 to +125
1.0
150
30
-55~+150
40
-40~+100 120
- 65 to +175
℃
℃
℃
-55 to +150
Am
Am
℃/W
PF
℃
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
EMLaEximCuTmRFIoCrwAarLd VColHtaAgeRatA1C.0ATDECRISTICS (Ta=2V5F℃ unless otherw0.i5s0e specified0).70
0.85
0.9
0.92 Volt
Maximum Average Reverse Current at @T A=25℃
IR
0.5
mAm
Rated DC Block_Pin_ag_rV_ao_mlta_eg_te_er
@T A=125℃
Symbol
Test conditions
M¹i⁰n
Max
Unit
NOTES:
1- M^Re^ea^vs^eur^re^sd^eat^b1^rM^eaH^kZ^da^ond^waⁿpp^vlie^od^ltr^aev^ge^erse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Reverse voltage leakage current
V_(BR)
I_R
I_R= 100μA
V_R=70V
80
V
0.2
μA
Forward voltage
V_F
I_F=100mA
1200
mV
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.