DAN202U Datasheet, PDF (2/3 Pages) Rohm – Switching diode

WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
DAN202U^THRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
Typical Characteristics ^{• Low power loss, high efficiency.}
• High current capability, low forward voltage drop.
• High surge capability.
0.146(3.7)
0.130(3.3)
• Guardring for overvoltage protection.
•10U0 ltra high-spee^Fd^os^rww^ait^rc^dhin^Cg^h.^{aracteristics}
Reverse Characteristics
1000
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
3M0 IL-STD-19500 /228
300
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
10
100
Mechanical data
T_a=100℃
• Epoxy : UL94-V0 rated flame retardant
3
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
1
Method 2026
30
0.031(0.8) Typ.
10
T_a=25℃
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
0.3
• Mounting Position : Any
Dimensions in inches and (millimeters)
3
• Weight : Approximated 0.011 gram
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
0
20
40
60
80
MAXIMU^FOM^RWR^ARA^DT^VOIN^LTG^AGS^E A^VN_F D^(VE⁾ LECTRICAL CHARACTERISTICS ^{REVERSE VOLTAGE V}_R ^(V)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking C₁o_.6de
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Capacitance Characteristics
12
13 250 14
15 ^Pow16^{er Deratin}1^g8^Curve 10
115 120
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM^Ta^=25℃ 20
30
40
50
60
VRMS^f=1MHz 14
21
28
35
42
80
100
150
200 Vol
56
70
105
140 ^Vol
Maximum DC Blocking Voltage
VDC
20
30 ²⁰⁰ 40
50
60
80
100
150
200 ^Vol
Maximum Average Forward Rectified Current
IO
1.4
1.0
Am
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
150
30
Am
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/
Typical Junction Capacitance (Note 1)
CJ
100
120
PF
1.2
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
50
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum₁F_.0orward Voltage at 1.0A DC
VF
Maximum Av⁰erage Reverse⁵ Current at @¹⁰ T A=25℃ ¹⁵
Rated DC Blocking Voltage ^{REVERSE VO}@^LTT^AGA^E=12^V5^R℃^(V)
IR
20
0.5₀0
0
0.70
0.85
25
50 _0.5 75
100
125
AMBIENT TE₁M₀PERATURE T_a (℃)
0.9
150
0.92 Vo
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.