DAN202U Datasheet, PDF (1/3 Pages) Rohm – Switching diode

WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
DAN202U^THRU
FM1200-M+
Pb Free Product
Features
SWIT^•C^BbH_eaI_ttN_tcehG_r ^prerD^ovceIO^erssD_es E_{ldeeaskiaggne,} ^{ecxucrerellnetnat} _{npdowtheerrdmisasl} ^{irpeastiisotnanocffee.rs}
FEAT^•U^LR^owES^pr:^{ofile surface mounted application in order to}
optimize board space.
z F_•ou_Lor_wty_pp_oe_ws_ero_lof _sp_sa_, c_hk_iga_hg_ei_fn_fig_ciea_nr_ce_y.available
z H^•ig^Hh^igs^hp^ce^ue^rrd^{ent capability, low forward voltage drop.}
z S^•u^Hita^igb^hle^suf^ro^gr^e h^caig^ph^abp^ila^ityc^.king density layout
• Guardring for overvoltage protection.
z H•igUhltrraehliiagbh-ilsitpyeed switching.
z P^•b^S-F^ilir^ce^oe^{n e}p^pa^itc^axkⁱa^alg^pe^laiⁿs^ara^cv^ha^ipi^,la^mb^etl^ae^{l silicon junction.}
• Lead-free parts meet environmental standards of
RoMHISL-SpTroDd-1u9c5t0f0o/r22p8acking code suffix ”G”
H^•a^Rlo^og^He^Sn^profr^de^ue^ct p^for^ro^pd^acu^kcⁱⁿt^gfo^cor^dp^ea^suc^fk^fixin^"g^G"code suffix “H”
Halogen free product for packing code suffix "H"
z M_Moi_est_cu_hre_aS_ne_in_cs_ai_ltiv_di_aty_taLevel 1
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
MARK^{• M}IN^oG^un:^tN^{ing Position : Any}
• Weight : Approximated 0.011 gram
Package outline
SO^ST^O-^D3^-2¹3^23H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
2
0.031(0.8) Typ.
0.071(1.8)
0.056(1.4)
3
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Maximum RaMtiAnXgIsMaUnMdREAleTcINtrGicSalACNhDaEraLcEtCerTiRstIiCcAsL, SCiHngAlReADCiToEdReI@STTICa=S25 ℃
Ratings at 25℃ _Pam_arb_aie_mnt_et_te_em_r perature unless otherw_Sis_ye_ms_bp_oec_l ified.
Single phase half wave, 60Hz, resistive of inductive load.
F^Po^er^ac^kap^ra^ec^vit^eiv^re^seloa^vd^o,^ld^tae^gra^ete current by 20%
V_RM
Limit
80
Unit
V
DC reverse voltag_Re_ATINGS
V _SYMV_BR_{OL FM120-MH FM130-MH FM140-MH FM1}8₅0_{0-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI}
M_Mar_ak_xin_ig_mC_uo_mde_{(peak) forward current}
Maximum Recurrent Peak Reverse Voltage
Average forward current
Maximum RMS Voltage
M^Pa^oxi^wm^eum^{r d}DⁱC^ssBⁱl^poc^ak^tiⁱn^ogⁿVoltage
I_FM
12
13
14
3¹0⁵0 ¹⁶
VRRM
20
30
40
50
60
VR^IM^OS
14
21
100
28
35
42
V^PDC^D
20
30
40
2₅0₀0 ₆₀
18
10 _mA115 120
80
56
100
150
70 ^mA105
200 Volts
140 ^Volts
80
100 ^mW150
200 ^Volts
M_Ja_ux_nim_cu_tm_ioA_nve_tera_mge_pF_eo_rr_aw_ta_ur_rd_eRectified Current
I_TO _j
150
1.0
℃
Amp
PSeatok rFaorgweartdeSmurpgeerCautrurernet 8.3 ms single half sine-wave _IT_FSsMtg
superimposed on rated load (JEDEC method)
-55~+150 ₃₀
℃
Amp
E^TyL^pE^icaC^{l T}T^hR^erI^mC^aA^{l R}L^esC^istH^anA^ceR^(NA^oC^teT²⁾ERISTICS (Ta=^R2^Θ5^J℃^A unless otherwise specified)
40
℃/W
Typical Junction Capacitance (Note 1)
CJ
120
PF
Operating Temp_Per_aa_rtu_ar_me R_ea_teng_re
Storage Temperature Range
TJ _Symbol
TSTG
-55 to +125
Test conditions
- 65^Mtⁱoⁿ+175 ^{M-5a5xto +150 Unit}
℃
℃
Reverse break_Cd_Ho_Aw_RAn_Cv_To_El_Rta_ISg_Te_ICS
V_(BR)
I_R= 100μA
80
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
Ma^Rxi^em^vu^em^rsA^eve^vra^og^le^taR^ge^eve^lr^es^ae^kC^au^grr^een^ct ^uat^rre@ⁿT^tA=25℃
Rated DC Blocking Voltage
Forward voltage
NOTES:
@T A=125℃
VF
I_R
IR
V_F
0.50
V_R=70V
I_F=100mA
0.70
0.5
10
0.85
0.1
1.2
0.9
0.92 Volt
μA
mAm
V
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Diode capacitance
C_D
2- Thermal Resistance From Junction to Ambient
V_R=6V, f=1MHz
3.5
pF
Reverse recovery time
t_rr
V_R=6V, I_F=5mA
4
ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.