D882 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – TO-126 Plastic-Encapsulate Transistors

WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM120-M+
D882 THRU
FM1200-M
Typical Char^Sa^Oc^Dt^-1e²r³i⁺st^Pi^Ac^Cs^KAGE
Pb Free Produ
F2.00 eatures ^{Static Characteristic}
1000
• Batch
1.75_better
process
reverse
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n^Tda⁼²th⁵ e^℃rmal resista
offer
nce.
s
• Low profile surface mounted7amApplication in order to
1.50
optimize board space.
6mA
•_1.25Low power loss, high efficiency. _5mA
• High current capability, low forward voltage drop.
•^1.00High surge capability.
4mA
100
Package o _hFE u_—t_—line_IC
T =100℃
a
T =25℃
a
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•_0.75Guardring for overvoltage protection. _3mA
• Ultra high-speed switching.
•^0.50Silicon epitaxial planar chip, metal silicon ju^2mn^Action.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
0.25
MIL-STD-19500 /228
I =1mA
B
0^•.0^R0 ^{oHS product for packing code suffix "G"}
10
H⁰alogen¹ free p² roduc³t for pa⁴ cking⁵code s⁶uffix "H⁷ " ⁸
1
COLLECTOR-EMITTER VOLTAGE V (V)
Mechanical data
CE
•₁₀₀₀Epoxy : UL94-V0 r^VaCtEesadt fl^—am^—e re^ICtardant
2000
COMMON EMITTER
V = 2V
CE
10
100
1000
3000
COLLECTOR CURRENT I (mA)
C
V_BEsat —— I_C
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
1000
Method 2026
100
• Polarity : Indicated by cathode band
0.031(0.8) Typ.
0.031(0.8) Typ.
T =25℃
a
Dimensions in inches and (millimeters)
• Mounting Position : Any
T =100 ℃
• Weight : Approxima^a ted 0.011 gram
T =100 ℃
a
10
MAXIMUM^Ta⁼R²⁵A^℃TINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load._β=10
For capa¹c₁itive load, dera₁t₀e current by 2₁₀0₀%
1000
3000
100
1
β=10
10
100
1000
3000
C_RO_ALL_TE_IC_NT_GOR_SCURREMT
I
C
(mA)
COLLECTOR CURREMT I (mA)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM18^C0-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximu³m⁰⁰⁰Recurrent
Peak
I_C —— V_BE
Reverse Voltage
Maximu₁m₀₀₀RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
12
VRRM
20
VRMS
14
VDC
20
IO
13
14
30⁵⁰⁰
40
21
28
30
40
1C5_ob/C_ib —1—6 V_CB/V1_EB8
50
60
80
35
42
56
50 _C
60
80
ib
1.0
10
100
f=1MHz
I_E=₇0/₀I_C=0
T =25 ℃
a₁₀₀
115 120
150
200
105
140
150
200
100
Peak For¹w⁰⁰ard Surge Current 8.3 ms single half sine-wave _IFSM
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
30
C
ob
40
Typical Ju¹⁰nction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
COMMON ETMSITTTGER
- 65 to +175
V = 2V
CE
1
0
CHA³R⁰⁰ACTERISTI⁶C⁰⁰S
900
BASE-EMMITER VOLTAGE V (mV)
Maximum Forward Voltage at 1.0A DC
BE
10
SYMBOL¹²F⁰M⁰ 120-MH
0.1
FM130-MH
FM140-MH
1
FM150_R-_EM_VH_ERF_SM_E16_V0_O-_LM_TH_AGF_EM1_V80-M_(VH₎
10
20
FM1100-MH
FM1150-MH
FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average
Rated DC⁶⁰B⁰ locking
Reverse
Voltage
Curre_Pn_Ct
at_——@T
@T
A_T=_a 25℃
A=125℃
IR
0.5
10
NOTES: 500
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal⁴⁰R⁰ esistance From Junction to Ambient
300
200
100
2012-₀ 06
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.