D882 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TO-126 Plastic-Encapsulate Transistors

WILLAS
SO_1.0T_A-_S8_U9_RFP_Al_Ca_Es_Mt_Oic_UN-E_{T S}n_Cc_Ha_Op_TTs_Ku_{Y B}la_At_Re_RIET_Rr_Ra_En_Cs_TIi_Fs_IEt_Ro_Sr_-s_{20V- 200V}
SOD-123+ PACKAGE
FM120-M+
D882 ^THRU
FM1200-M
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
TRANSISTO^oR^pti(^mN^izP^eN^b)^{oard space.}
• Low power loss, high efficiency.
FEATURE_•S_{High current capability, low forward voltage drop.}
Power ^•di^Hsⁱs^gi^hp^sa^uti^ro^gn^{e capability.}
Pb-Free pa^•• c_UGk_luta_raarg^dhe^riigni_hgs_-sfoa_prv_eoea^vdi^el_sa^rvwb^oitl^lcte^{ahginegp. rotection.}
RoHS prod•uScilticfoonr eppaitcakxiinalgplcaondarechsiupf,fmixe”taGl ”silicon junction.
Halogen fre^• e^Lep^ar^do^-fd^reu^ec^pt ^afo^rtsr ^mpa^eec^tk^einⁿg^virc^oo^nmde^ens^tau^lf^sfi^tx^an“^dH^a”^{rds of}
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Package outline
SOD-123H
SOT-89
0.146(3.7)
0.130(3.3)
1. BASE
2. COLLECTOR
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
MAXIMU^•M^EpR^oxA^yT^: I^UN^LG⁹⁴S^-V(⁰T^ra^a=^te2^d5^f℃^lamu^en^rl^ee^tas^rs^daoⁿt^therwise noted)
• Case : Molded plastic, SOD-123H
Symbol • Terminals :PlPaaterdamteermteirnals, solderable pVearluMeIL-STDU-7n5it0,
3. EMITTER
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
V_CBO
Collector-^MB^ea^ts^he^odV²o⁰lta²g⁶e
40
V
V_CEO
• Po_Cla_or_lli_ety_ct:_oIn_r-d_Eic_ma_it_te_ted_r b_Vy_oc_lta_at_gh_eode band
30
V
V_EBO
• M_Eou_mn_it_ti_tn_eg_r-P_Bo_as_si_etio_Vn_ol:_tA_agn_ey
6
V
• Weight : Approximated 0.011 gram
I_C
Collector Current -Continuous
3
A
Dimensions in inches and (millimeters)
P_C
Colle^Mct^Aor^XP^IMow^Ue^Mr D^Ris^As^Tip^Ia^Nti^Gon^{S AND EL}0^E.^C5 ^TRICALW^{CHARACTERISTICS}
T_J ^{Ratings at 2}J⁵u^℃nct^aio^mn^bT^ieeⁿm^{t t}p^ee^mr^pa^etu^rare^{ture unless otherwis}1^e5^s0^pecified. ℃
Single phase half wave, 60Hz, resistive of inductive load.
T_{stgFor capacit}S_ivt_eor_loa_ag_de_{, d}T_ee_rm_atp_ee_cr_ua_rt_ru_er_ne_{t by 20%}
-55~150
℃
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
12
13
14
15
16
ELE^MC^aT^ximR^uI^mCA^ReL^cuC^rreH^ntA^PR^eaA^k C^ReT^veE^rsR^eI^VS^oT^ltaI^gC^eS(Ta=
Maximum RMS Voltage
25℃^VVRRu_MRn^MS less²¹o⁰⁴therw³²i⁰¹se
spe⁴²⁰⁸cified⁵³) ⁰⁵
60
42
18
10
115 120
80
100
150
200
56
70
105
140
Maximum_PD_aC_raB_mloc_ek_tin_eg_r Voltage
Maximum Average Forward Rectified Current
Collector-base breakdown voltage
Symbo^Vl^DC
IO
V_(BR)CBO
Col^Ple^eac^kto^For-^rwe^am^rdit^St^ue^rr^geb^Cre^ura^rekⁿd^t o^8.w^{3 m}n^sv^soⁱⁿl^gta^leg^he^{alf sine-w}V^av(^eBR)CE^IFO^SM
superimposed on rated load (JEDEC method)
Em_Tit_yt_pe_icr-_ab_{l T}a_hs_ee_rmb_ar_le_Ra_ek_sd_iso_taw_ncn_e v_(No_ol_tt_eag₂₎e
V_{(BR)ERBOΘJA}
ColTleypcitcoalrJcuunctt-ionffCcauprarceitanntce (Note 1)
I_CBO CJ
Col^Ole^pc^et^rao^trⁱⁿc^gu^Tt^e-^mo^pff^erc^au^tur^rr^ee^Rn^at^nge
Storage Temperature Range
Emitter cut-off current
I_CEO ^TJ
TSTG
I_EBO
T²e⁰st con³d⁰itions ⁴⁰
I_C = 100μA, I_E=0
I_C = 10mA, I_B=0
I_E= 100μA, I_C=0
V_CB= 40V, I_E=0
V_CE= 30V^-5,⁵I_B^to=0⁺¹²⁵
V_EB= 6V, I_C=0
5_M0 _in 60 _Typ 80 _Max100 _Unit150
200
1.0
40
V
30
30
V
6
40
V
120
1
µA
- 65 to +175
-5₁5₀to +150 _µA
1
µA
CHARACTERISTICS
h_FES₍₁Y₎ MBOL ^FV^M_C¹_E²=^0-2^MV^H, ^FI_C^M=¹³1^0-A^{MH FM140-MH FM15}6⁰0^{-MH FM160-MH FM180-MH}4^F0^M0^{1100-MH FM1150-MH FM1200-MH}
DC_Mc_au_xr_imre_un_mt_Fg_oa_rwin_{ard Voltage at 1.0A DC}
h_FE(2)^VF V_CE=2V, I_C= 100⁰m^.50A
32^0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T
Col_Rle_ac_tet_do_Dr-_Cem_Bloit_ct_ke_inr_gs_Va_ot_lu_tar_ga_etion voltage_@T
AA==12255℃℃^VCE(sat)IR
I_C= 2A, I_B= 0.2 A
0.5
10
0.5
V
Base-emitter saturation voltage
NOTES:
V_BE(sat)
I_C= 2A, I_B= 0.2 A
Tra¹n^- s^Mi^et^aio^sun^ref^dre^atq¹u^Me^Hn^Zcy^{and applied reverse voltage of 4.0 V}f^DT ^C.
V_CE= 5V , Ic=0.1A
50
2- Thermal Resistance From Junction to Ambient
f =10MHz
1.5
V
MHz
CLASSIFICATION OF h_FE(1)
Rank
R
20^R1^a2ⁿ-0^g6^e
60-120
2012-0
O
100-200
Y
160-320
GR
WILLAS²⁰E⁰L^-4E⁰C⁰TRONIC COR
WILLAS ELECTRONIC CORP.