C945 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

WILLAS
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SOD-123+ PACKAGE
FM120-M+
C945 ^THRU
FM1200-M
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
Typical Characteristics • Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
0.146(3.7)
0.130(3.3)
• High current capability, low forward voltage drop.
0.012(0.3) Typ.
• High surge cap_Sa_tb_ati_il_city_C._{haracteristic}
•12 Guardring for overvoltage protection.
1000
• Ultra high-speed switching.
COMMON
30uA
EMITTER
•₁₀
Silicon
epitaxial
27uA
planar
chip,
metal
siliconT =ju25n℃ction.
a
• Lead-free parts meet environmental standards of
MIL-STD-1950²0^4u/^A228
300
8_{• RoHS product for p2a1cukAing code suffix "G"}
Halogen free product for¹p⁸a^uAcking code suffix "H"
h_FE —— I_C
T =100℃
a
T =25℃
a
0.071(1.8)
0.056(1.4)
6_{Mechanical data 15uA}
100
• Epoxy : UL94-V0 rated flame r1e2utAardant
4
• Case : Molded plastic, SOD-123H9uA
2^•
Terminals
:Plated
terminals,
solderabl⁶e^uAper
,
MIL-STD-750
30
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
0• Polarity : Indicated by cathode band
0
2
4
6
8
I =3uA
B
10
12
10
0.7 1
V =6V
CE
Dimensions in inches and (millimeters)
3
10
30
100 150
• Mounting CPOoLsLEitCioTOnR:-AEMnIyTTER VOLTAGE V (V)
CE
COLLECTOR CURRENT I (mA)
C
• Weight : Approxim_VCa_Et_sae_t d _—0._—011 _Ig_C ram
300
1000
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V_BEsat —— I_C
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
800
For c₁a₀₀pacitive load, derate current by 20%
T =25℃
a
RATINGT S=100℃
a
Marking Code
T =25℃
Maximum Recurrent Peak Reverse Voltage ^a
Maxim₃u₀m RMS Voltage
Maximum DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
12
13 ⁶⁰⁰ 14
15
16
VRRM
20
30
40
50
60
18
10
80 ^Ta^=100℃100
115 120
150
200
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30 ⁴⁰⁰ 40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
Peak F₁o₀rward Surge Current 8.3 ms single half sine-wave
superimp¹osed on rated³load (JEDEC m¹⁰ethod)
30
COLLECTOR CURRENT I (mA)
C
Typical Thermal Resistance (Note 2)
β=10
IFSM_{100 150}
RΘJA
200
0.1
0.3
1
30
3
10
30
COLLECTOR CURRENT I (mA)
C
40
β=10
100 150
Typical Junction
15
CapacitanCc_oe_b
/(NCo_it_be
1—) —
Operating Temperature Range
Storage Temperature Range
V_CB / V_EB
CJ
f^T=1^J MHz
TSI_E=T0G/I_C=0
T =25℃
a
-55 to⁰+^.25125
0.20
P_C —¹²â€”⁰ T_a
- 65 to +175
-55 to +150
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximu¹⁰m Forward Voltage at 1.0A DC
VF
C
ib
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.50
0.15
0.70
0.85
0.5
10
0.9
0.92
0.10
NOTES:₅
1- Measured at 1 MHZ and applied reverse vo^Clotbage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.05
0
0.1
0.3
1
3
10
REVERSE BIAS VOLTAGE V (V)
0.00
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.