C945 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

WILLAS
SO₁T_.0-_A2_S3_URP_FAla_CEs_Mti_Oc_U-_NE_Tn_Sc_CHa_Op_Ts_TKu_Yl_Ba_At_Re_RT_IEr_Ra_Rn_ECs_Ti_Is_FIt_Eo_RSrs_{-20V- 200V}
SOD-123+ PACKAGE
FM120-M+
C945 ^THRU
FM1200-M
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
TRANSISToOptRim(izNePbNoa)rd space.
FEATURE^•• _{HLoigwhpcouwrreernltocsasp, ahibgihlitey,ffliocwiefnocryw. ard voltage drop.}
z Ex•ceHlilgehnstuhrg_Fe_E cLainpaebairliittyy.
z Lo^•w^Gn^uo^ai^rs^de^{ring for overvoltage protection.}
• Ultra high-speed switching.
z _{Pb•-FSrileiceonpeapcitakxaiagl eplainsaar cvhaipil,ambelteal silicon junction.}
Package outline
SOD-123H
SOT-23_0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
0.071(1.8)
0.056(1.4)
Ro^•H^LS^eap^d-r^fo^red^eu^pc^at^rtf^so^mr ^ep^ea^t c^ek^nvin^irg^onc^mo^edⁿe^tals^su^taffⁿi^dx^a”^rG^ds”^of
MIL-STD-19500 /228
Ha•lo^Rg^oHe^Sn^pf^rr^oe^de^uctp^fr^oo^{r p}d^au^cc^kit^ngfo^cr^odp^ea^sc^ufk^fii^xn^"g^G"code suffix “H”
Halogen free product for packing code suffix "H"
2. EMITTER
3. COLLECTOR
MARKIN^MG^e:C^cR^{hanical data}
• Epoxy : UL94-V0 rated flame retardant
MAXIMU_• M_CaR_seA_:T_MIN_oldG_eS_{d p}(_lT_aa_s=_tic2_,5_S℃_ODu_-1n₂le_3Hss otherwise noted)
,
Symbol ^{• Terminals :Pla}P^tea^dra^tem^rmetⁱⁿe^ar ^{ls, solderable per MIL-STD-750} Value
Method 2026
V_CBO
Collector-Base Voltage
• Polarity : Indicated by cathode band
60
V_{CEO • M}C_oo_ull_ne_tc_into_gr_P-E_om_sii_tt_it_oe_nr _:V_Ao_nlt_yage
50
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Unit
V
Dimensions in inches and (millimeters)
V
V_EBO • WEemigithtet r:-ABpapsreoxViomltaatgeed 0.011 gram
5
V
I_C
Collec_Mto_Ar _XC_Iu_Mrr_Uen_Mt -_RCo_An_Tti_In_Nu_Gou_Ss _{AND ELECTRICAL CHAR}15_A0_CTERISTICS
mA
P_{CRatings at}C₂o₅l_℃lect_ao_mr _bP_ieo_nw_t e_ter_mD_pi_es_rs_aip_tua_retio_un_{nless otherwise specified.}
200
mW
T_J^{Single pha}J^su^en^hc^ati^lo^f n^waT^ve^em^{, 6}p⁰e^Hra^zt^,u^rere^{sistive of inductive load.}
150
℃
For capacitive load, derate current by 20%
T_stg
Storage Temperature
-55-150
℃
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
ELEC^MaT^rkRⁱⁿI^gC^CA^odL^e CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
(Ta=25℃_VRu_Rn_M less¹²o²⁰therw¹³³⁰ise
sp₄₁e₀₄cified₅₁)₀₅
16
60
18
10
115 120
80
100
150
200
Maximum R_PM_arS_aV_mol_eta_tg_ee_r
Sym^Vb^Ro^Ml ^S
Maximum DC Blocking Voltage
Collector-base breakdown voltage
Maximum Average Forward Rectified Current
V(BR)CB^V_O^DC
IO
Collector-emitter breakdown voltage
V(BR)CEO
Peak Forward
Em_suit_pt_ee_rr_im-b_poa_ss_ee_d
Surge Current 8.3 ms single half
o^bn^rr^ea^ate^kd^dlo^oa^wd (ⁿJE^vD^oE^lC^tam^ge^ethod)
sine-w_Vav₍e_BR)EBIFOSM
T¹e⁴st con²d¹itions²⁸
20
30
40
I_C=100uA, I_E=0
I_C=1mA , I_B=0
I_E=0.1mA, I_C=0
35 _Min42 _Typ 56 _Max70 _Unit105
140
50
60
60
80
100
150
200
V
1.0
50
V
5 ³⁰
V
Co_Tll_ye_pc_ict_ao_l r_Thc_eu_rmt-_ao_lf_Rf _ec_su_isr_tr_ae_nn_cet _{(Note 2)}
I_CBORΘJA V_CB=60V, I_E=0
40
0.1
uA
Co^Tll^ye^pc^ict^ao^l r^Jucⁿu^cttⁱ-^ooⁿf^Cf ^ac^pu^ar^cr^ite^an^nct^{e (Note 1)}
Operating Temperature Range
Em_Si_tt_ot_re_ar_gecu_Tet-_mo_pf_ef_rc_atu_ur_rere_Rn_at_nge
I_CER^CJ
TJ
I_EBTOSTG
V_CE=55V_-5,R₅=_to10₊₁M₂Ω₅
V_EB=5V , I_C=0
120
- 65 to +175
0.1
uA
-55 to +150
0.1
uA
DC current gain _{CHARACTERISTICS}
Maximum Forward Voltage at 1.0A DC
h_FE(1)
V_CE=6 V , I_C=1mA
130
400
h_FE^S₍^Y_2V)^M_F^BOL
F_VM_C1_E2₌0-₆MH_VF_,M13_I0_C-₌M₀₀H_..51F₀M_m1_A40-MH
FM150-MH₄F₀M160-MH
0.70
FM180-MH FM1100-MH
0.85
FM1150-MH
0.9
FM1200-MH
0.92
Co_Mll_ae_xc_imto_ur_m-e_Am_vei_rt_ate_ger s_Ra_evtu_err_sa_eti_Co_un_rrev_no_t l_at_tag_@e_{T A=25℃}VCE(sat)_IR
Ba^Rs^ae^te-e^dm^DCitt^Be^lr^ocs^kaⁱⁿt^gu^Vra^ot^lti^ao^gn^e voltage ^{@T A=125℃}VBE(sat)
I_C=100mA, I_B=10mA
I_C=100mA, I_B=10mA
0.5
0.3
V
10
1
V
TrNanOTsEitSio: n frequency
f_T
Co¹l^-l^Mec^eato^sur^reo^du^at^tp¹u^Mt^Hc^Za^apⁿa^dc^ai^pt^pa^ln^iec^d e^{reverse voltage of 4.0 V}C^Do^Cb^.
2- Thermal Resistance From Junction to Ambient
Noise figure
NF
V_CE=6V,I_C=10mA,f =30 MHz 150
V_CB=10V,I_E=0,f=1MH_Z
VCE=6V,IC=0.1mA
4
Rg=10kΩ,f=1kMHZ
MHz
3.0
pF
10
dB
CLASSIFICATION OF h_FE(1)
Rank
L
H
Range
2012-06
130-200
200-400
WILLAS ELECTRONIC COR
2012-0
WILLAS ELECTRONIC CORP.