BC869 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP medium power transistor

WILLAS
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SOD-123+ PACKAGE
FM120-M+
BC86 ^THRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
O u t l i n e D r a w i n g better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
Package outline
S O T- 8 9 ^SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing^.1c⁸od¹e⁽s⁴u^.f⁶fix⁰"⁾H"
Mechanical data _.173(4.39)
0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, so_.ld₀e₆ra₁b_Rle_Ep_Fer MIL-STD-750
y Method 2026 _(1.55)REF
• Polarity : Indicated by cathode band
r _{• Mounting Position : Any}
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
.063(1.60)
.055(1.40)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
a _{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
in Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.167(4.25)
RATINGS
lim ^{.1M5a4rk(in3g.C9o1de)}
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
.102(2.60)
SYMBOL FM120-MH FM130-MH F_.M₀1₉40₁-M₍H₂F_.3M1₀5₎0-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
18
10
115 120
V^.0RR²M^3(0.52⁸0 ⁾ 30
40
50
60
80
100
150
200
V^.0RM¹S^6(0.41⁰4 ⁾ 21
28
35
42
56
70
105
140
e _{Maximum DC Blocking Voltage}
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
r _.047(1.2)
Peak Forward Surge Current 8.3 ms single half sine-wave
P _{superimpo.s0ed3o1n(r0at.e8d )load (JEDEC method)}
IFSM
30
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range _.060TYP
Storage Temperature Range _(1.50)TYP
RΘJA
CJ
TJ
TSTG
-55 to +125
.197(0.52)
.013(0.32)
40
120
-55 to +150
- 65 to +175
.017(0.44)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
.118TY_SP_{YMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH F}.0_M11₈4_0-(_M0_H._F3_M5₁₁)_{00-MH FM1150-MH FM1200-MH}
(3.0)TYPVF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
0.5
Rated DC Blocking Voltage
@T A=125℃
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
Dimensions in inches and (millimeters)
Rev.C
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.