BC869 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP medium power transistor

WILLAS
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SOD-123+ PACKAGE
FM120-M+
BC86 ^THRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
TRANS•ISLoTwOpRro(fiPleNsPur)face mounted application in order to
SOD-123H
SOT-89
FEATU_•R_LoE_opS_{wtimpiozweebrolaorsds,shpiagchee. fficiency.}
 NP^•N^HiC^ghom^cup^rrl^eeⁿm^{t c}e^an^pt^abto^ilitB^y,C^lo8^w6^f8^{orward voltage drop.}
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
 Low^{• H}V^igo^hlt^sa^ug^rge^{e capability.}
• Guardring for overvoltage protection.
 Hig•hUlCtrua rhriegnh-tspeed switching.
 ^{Pb•-FSrileiceonpeapcitkaaxgiael pilsanaavr achiliap,bmleetal silicon junction.}
Ro^•H^LS^eap^dr^-o^frd^eu^ec^pt^af^ro^tsr^mp^ea^ec^tk^ein^nvg^irc^oo^nmde^ens^tau^lf^sfi^tx^an”G^da”^{rds of}
MIL-STD-19500 /228
Ha^•lo^Rg^oe^Hn^{S p}fr^re^ode^ucp^tr^fo^od^{r p}u^ac^ct^kifⁿo^gr^cp^oa^deck^suin^ffg^{ix "}c^Go^"de suffix “H”
1. BASE
2. COLLECTOR
3. EMITTER
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
MAXIMUM RATINGS
• Epoxy : UL94-V0
r⁽a^Tt^ae⁼d²fl⁵a^℃me
unless otherwise
retardant
noted)
0.040(1.0)
0.024(0.6)
Sym^•b^Col^{ase : Molded plastic, SOD}P^-a¹r²a³m^Heter
,
VCB^•O^TerminC^alo^sll^:e^Pc^lato^ter-^dB^ta^es^re^miVⁿo^al^lt^sa^,g^se^{olderable per MIL-STD-750}
Method 2026
y _VCEO
Collector-Emitter Voltage
• Polarity : Indicated by cathode band
r _VEB•OM
oun
t
Emitter-Base Voltage
ing Position : Any
Value Unit ^{0.031(0.8) Typ.}
0.031(0.8) Typ.
-32
V
-20
V
Dimensions in inches and (millimeters)
-5
V
a I_C•
Collector Current
Weight : Approximated 0.011
gram
-1
A
PC
Collector Power Dissipation
500
mW
in ^RθJA
M_ThA_eX_rmIM_alU_RM_esR_isA_taT_nI_cN_eG_FrS_omAN_JuD_ncE_tiL_oE_n C_ToT_AR_mIC_bA_ieL_ntCHARAC₂T₅₀ERISTICS_℃/W
RSiantginleg_Tsp_{j haat s2e5℃halJfauwmnabcvit}ee_ion, t_n6t0eTHmezmp,er_pereast_riusart_tieuveru_enolfeisnsduocthtievrewliosaeds.pecified.
150
℃
For c^Tasptgacitive lo^Sad^to, ^rd^ae^gra^ete^Tec^murr^pe^en^rt^ab^ty^ur2^e0%
-55~+150
℃
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
lim ^{EMLarEkiCngTCRodIeCAL CHARACTERISTICS (Ta=25℃ unl1e2ss oth13erwise14speci1fi5ed) 16}
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200
Maximum RMS_PV_ao_rl_ata_mge_eter
S^Vym^RMb^Sol ¹⁴ Test ²c¹onditio²n⁸s ³⁵
4_M2_{in T}5_y6_{p M}7_a0_{x Un}10_it5 140
e _{MCaoxilmleucmtoDrC-bBaloscekinbgreVaolktadgoewn voltage}
V(^VBR^D)^CCBO ²I⁰C=-100µ³⁰A,IE=0 ⁴⁰
50
6_-0₃₂
80
100
V¹⁵⁰
200
r _{MCaoxilmleucmtoArv-eeramgeittFeorrwbarredaRkedcotifwiednCvuorrletantge}
V(B^IR^O)CEO IC=-1mA,IB=0
-2¹0^.0
V
P ^{PEeamk iFtoterwra-brdaSsuergbe rCeuarrkendto8w.3 nmsvsoinltgaleghealf sine-wave V(IBFRS)MEBO IE=-100µA,IC=0}
-5₃₀
V
s_Cup_oe_lri_lm_ep_co_ts_oe_rd _con_utra_-ote_fd_flo_ca_ud_r(_rJ_eE_nD_tEC method)
ICBO
VCB=-25V,IE=0
-0.1
µA
Typical Thermal Resistance (Note 2)
RΘJA
40
T^Eyp^micⁱa^tl^tJ^eu^rn^cct^uio^tn^-oC^fa^fp^ca^uci^rta^rencⁿe^t (Note 1)
I_CEB_JO
VEB=-5V,IC=0
120
-0.1
µA
Operating Temperature Range
hTFEJ (1)
VCE=^-51⁵0V^to, ⁺IC¹=²-⁵5mA
50
-55 to +150
S_Dto_Crag_ce_uT_rre_em_np_ter_ga_atu_ir_ne Range
T_hS_FT_E(G₂₎
VCE=-1V, IC=-0.5A
- ₁6₀5₀to +175
375
CHARACTERISTICS
MCaoxilmleucmtoFor-rewmarditVteorltasgaetuatr1a.t0iAonDCvoltage
Maximum Average Reverse Current at @T A=25℃
R^Bat^ae^sd^eDC^-eB^mloⁱc^ttk^ein^rg^vV^oo^ll^tta^ag^ge^e
@T A=125℃
S^hY^FM^EB⁽³O⁾ L
FM12^V0^C-M^EH^=-F¹M^V1^,30^IC-M⁼H^-1F^AM140-MH
FM150-MH
60
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
FM1200-MH
VCVEF(sat) IC=-1A,IB=-00.1.5A0
0.70
0.85 -0.5
0V.9
0.92
V^IRBE
VCE=-1V, IC=-1A
VCE=-10V, IC=-5mA
0.5
-1
V
10 _-0.62
V
N_TO_rT_aE_nS_s: _{ition frequency}
fT
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
VCE=-5V,IC=-10mA, f=100MHz 40
MHz
C^2- L^ThA^erS^mS^al I^RF^eI^sC^istA^anT^ceIO^FrN^om O^JuF^ncth^ioFⁿE^t(^o2)^Ambient
RANK
RANGE
MARKING
BC869
100–375
CEC
BC869-16
100–250
CGC
BC869-25
160–375
CHC
2012-06
WILLAS ELECTRONIC CORP
2012-10
WILLAS ELECTRONIC CORP.