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| BAS70W Datasheet, PDF (2/6 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
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WůÄÆÆÅÄͲ ŶÄÄÆÆƵůÄÆÄ^ÄÅŽÆÆŬÇÄÆÆÅÄÆÅŽÄÄÆ
^ϳϬt
THRU
^ϳϬtͲϬϲ
Typical Characteristics
70
Pulsed
10
Forward Characteristics
1
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
FORWARD VOLTAGE VF (V)
100
Pulsed
10
1
Reverse Characteristics
Ta=100â
0.1
Ta=25â
0.01
1E-3
0
10
20
30
40
50
60
70
REVERSE VOLTAGE VR (V)
Capacitance Characteristics Per Diode
2.4
Ta=25â
f=1MHz
2.0
1.6
1.2
0.8
0.4
0.0
0
4
8
12
16
20
REVERSE VOLTAGE VR (V)
250
200
150
100
50
0
0
Power Derating Curve
25
50
75
100
125
AMBIENT TEMPERATURE Ta (â)
2014.12
www.willas.com.tw
Rev.J03
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