BAS70W Datasheet, PDF (1/6 Pages) NXP Semiconductors – Schottky barrier double diodes

WůĂƐƚŝĐͲŶĐĂƉƐƵůĂƚĞ^ĐŚŽƚƚŬLJĂƌƌŝĞƌŝŽĚĞƐ
^ϳϬt
THRU
^ϳϬtͲϬϲ
PRIMARY CHARACTERISTICS
P_D
200m:
V_RRM
70V
I_F
70mA
V_F#,_F P$
410mV
T_{J Max}
125℃
SO7-323 PACKAGE
BAS70W Marking: K73 BAS70W-04 Marking: K74
BAS70W-05 Marking: K75
BAS70W-06 Marking: K76
FEATURES
 Low Turn-on voltage
 Fast Switching
 Also available in lead free version
 Moisture Sensitivity Level 1
MAXIMUM RATINGS @T_A=25℃
MECHANICAL DATA
 Case：Molded plastic,SOT-23
 Polarity：Shown above
 Terminals :Plated terminals,
solderable per MIL-STD-750,Method
2026
 Epoxy : UL94-V0 rated flame
retardant
Symbol
Parameter
Value
V_R
DC Voltage
70
I_F
Forward Continuous Current
70
P_D
Power dissipation
200
T_J
Operating Temperature
-55~125
T_stg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Units
V
mA
mW
℃
℃
Parameter
Symbol
Test conditions
Reverse breakdown voltage
V_{(BR) R}
I_R= 10µA
Reverse voltage leakage current= IR VR 50V
Forward voltage
Diode capacitance
V_F
I_F=1mA
I_F=15mA
= C= _D V_R 0V,f 1MHz
Reveres recovery time
I_F=I_R=10mA,I_rr=0.1xI_R,
t_rr
R_L=100Ω
2014.12
www.willas.com.tw
MIN
MAX
70
100
410
1000
2
5
UNIT
V
nA
mV
pF
nS
Rev.J03