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| BAS40W Datasheet, PDF (2/5 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
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^ϰϬt
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Typical Characteristics
Forward Characteristics
200
100
Reverse Characteristics
100
10
Ta=100 â
10
1
1
0.1
Ta=25â
0.1
0.01
0.01
0.0
0.2
0.4
0.6
0.8
1.0
FORWARD VOLTAGE VF (V)
1E-3
0
10
20
30
40
REVERSE VOLTAGE VR (V)
Capacitance Characteristics
4
Ta=25â
f=1MHz
3
2
1
0
0
5
10
15
20
REVERSE VOLTAGE VR (V)
Power Derating Curve
200
150
100
50
0
0
25
50
75
100
125
AMBIENT TEMPERATURE Ta (â)
2014.11
www.willas.com.tw
Rev. J04
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