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| BAS40W Datasheet, PDF (1/5 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
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THRU
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PRIMARY CHARACTERISTICS
PD
150mW
IF
1mA
VRRM
40V
VF
380mV
TJ Max
150â
FEATURES
ï¬ Low Forward Voltage Drop
ï¬ Fast Switching
ï¬ Moisture Sensitivity Level 1
SOT- PACKAGE
MECHANICAL DATA
ï¬ Caseï¼Molded plastic,SOT-323
ï¬ Polarityï¼Shown above
ï¬ Terminals :Plated terminals,
solderable per MIL-STD-750,Method
2026
ï¬ Epoxy : UL94-V0 rated flame
retardant
Maximum Ratings @Ta=25â
Parameter
Symbol
Limit
Peak repetitive peak reverse voltage
VRRM
Working peak reverse voltage
VRWM
40
DC blocking voltage
VR
Forward continuous current
IFM
200
Power dissipation
Thermal resistance junction to ambient
Operating temperature
Storage temperature range
PD
RθJA
TJ
TSTG
150
667
-55~+125
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage
V(BR)
IR= 10μA
40
Reverse voltage leakage current
= IR VR 30V
Forward voltage
Diode capacitance
VF
IF=1mA
IF=40mA
= = CD VR 0,f 1MHz
Reverse recovery time
t rr
Irr=1mA, IR=IF=10mA
RL=100â¦
2014.11
www.willas.com.tw
Unit
V
mA
mW
â/W
â
â
Max
Unit
V
200
nA
380
mV
1000
5
pF
5
ns
Rev. J04
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