BAS40V Datasheet, PDF (2/3 Pages) Diodes Incorporated – DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

WILLAS
SO_1.0T_A-_S5_U6_R3_FAP_CEla_Ms_OUti_Nc_T-_SE_Cn_HOc_Ta_Tp_KYs_Bu_Al_Ra_Rt_Ie_ERD_REio_CTd_IFe_IEs_{RS -20V- 200V}
SOD-123+ PACKAGE
FM120-M+
BAS40V ^THRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
O u t l i n e D r a w i n g ^{better reverse leakage current and thermal resistance.}
• Low profile surface mounted application in order to
optimize board space.
S O T- 5 6 3 ^SOD-123H
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
z
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228 _.067(1.70)
.024(0.60)
• RoHS product for packing code suffix "G"
.059(1.50) ^{Halogen free product for packing code suffix "H"}
.020(0.50) ^.012(0.30)
Mechanical data
.004(0.10)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
y _{Method 2026}
r _{• Polarity : Indicated by cathode band}
• Mounting Position : Any
a _{• Weight : Approximated 0.011 gram}
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
in ^{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
lim ^RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
e _{Maximum RMS Voltage}
.011(0.27) _{Maximum DC Blocking Voltage}
r _{.007(0.17) .007(0.16) Maximum Average Forward Rectified Current}
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
12
13
14
15
16
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
18
10
115 120
80
100
150
200 Vo
56
70
105
140 ^Vo
80
100
150
200 ^Vo
IO
1.0
Am
P .003(0.08) _{Peak Forward Surge Current 8.3 ms single half sine-wave IFSM}
30
Am
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
CJ
120
P
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
0.50
0.70
0.85
0.9
0.92 Vo
IR
0.5
mA
10
NOTES:
.067(1.70)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.059(1.50) ^{2- Thermal Resistance From Junction to Ambient}
2012-06
2012-11
Dimensions in inches and (millimeters)
WILLAS ELECT^RR^eO^vN^.AIC CORP.
WILLAS ELECTRONIC CORP.