BAS40V Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

WILLAS
SO_1.0T_A-_S5_U6_RF3_ACP_Ela_MOs_Ut_Nic_T-_SE_CHn_Oc_Ta_TKp_Ys_Bu_Al_Ra_Rt_IEe_RD_REi_Co_Td_IFe_IEs_{RS -20V- 200V}
SOD-123+ PACKAGE
FM120-M+
BAS40V ^THRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
SOT-563
better reverse leakage current and thermal resistance.
SCHOT_•T_LK_oY_{w p}B_roA_fiR_leR_suIE_rfR_aceD_mIO_ouD_nE_{ted application in order to}
FEATURE^opS^{timize board space.}
z
Low^••
L_Fo_ow_rwpo_aw_rder _Vlo_os_ls_t,_ah_gig_eh_Def_rf_oic_piency.
High current capability, low forward
volt
age
drop.
z Fas•tHSigwhitscuhrginegcapability.
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
z Pb-F^• r^Ge^ue^ap^rda^rcⁱⁿk^ga^fg^ore^oi^vs^era^vv^oa^lti^al^ga^eb^ple^rotection.
• Ultra high-speed switching.
RoH_•S_Sip_lir_co_od_nu_ec_pt_itf_ao_xr_iap_la_pc_lak_nin_ag_{r c}c_ho_ipd_,e_ms_eu_taff_lix_si”_liG_co”_{n junction.}
0.071(1.8)
6 5 4 ^0.056(1.4)
Halo•gLeenadfr-efreeepproardtus cmtefeotrepnavcirkoinnmgecnotdalestsaunfdfiaxrd“Hs ”of
z Moi_•s_Rt^Mu_o^Ir_H^Le^-_S^SS_p^T_re^D_on_d^-1_us_c⁹i_t⁵t_fi⁰_ov⁰_ri_pt^/2y_ac²L_k⁸_ine_gv_ce_ol_d1_{e suffix "G"}
Markin_Mg^H:_e^aK^l_c^oA^g_h^eNⁿ_a^fr_n^ee_i
product
cal d
for
at
packing
a
code
suffix
"H"
1 23
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
Maximu^• m^CasR^ea^:t^Min^og^lds^ed@^plT^asa^t=^ic2^, 5^S℃^OD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
y _Parameter
Method 2026
r _{• Polarity : Indicated by cathode band}
Non-Re_•p_Me_oti_uti_nv_te_inP_g e_Pa_ok_siR_tioe_nve_{: A}rs_ne_y Voltage
a _{DC Blo•cWkienigghVto:lAtapgperoximated 0.011 gram}
Symbol
V_RM
V_R
Limit
Unit
Dimensions in inches and (millimeters)
40
V
in ^{Average RectifMieAdXOIMutUpuMt CRuArTreINntGS AND ELIEOCTRICAL CHARACTERISTI2C0S0}
mA
P_Ro_aw_tine_gr_sD_ai_ts₂s₅i_℃pat_aio_mn_{bient temperature unless otherwis}P_ed_specified.
150
mW
T^Shⁱⁿe^gr^lm^{e p}a^hl ^aR^se^es^hi^as^lfta^wn^ac^ve^e, J⁶⁰u^Hn^zc^,t^ri^eo^sn^istt^ivo^{e of inductive load.}
A^Fm^orb^ci^ae^pn^at^{citive load, derate current by 20%}
R_θJA
667
℃/W
lim ^{2SHUDWLQJ temperaRtuArTeINGS}
Marking Code
S_Mt_ao_xr_ima_ug_me _Rte_em_cup_rre_enra_{t P}tu_eare_{k R}ra_en_veg_rse_{e Voltage}
SY_TM_JBOL FM120-MH FM130-MH FM140-MH_F_M_a15_0₁-M₂H₅ FM160-MH FM180-MH FM1100-MH FM_℃1150-MH FM1200-MH UN
12
13
14
15
16
18
10
115 120
T_VSRTRGM
20
30
40 ^-555^~0⁺¹⁵⁰ 60
80
100
℃₁₅₀
200 Vo
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^Vo
e _{Maximum DC Blocking Voltage}
VDC
20
30
40
50
60
80
100
150
200 ^Vo
r _{MEaxLimEuCmTARveIrCagAe FLorwCaHrdARRecAtifiCedTCEurRreInSt TICS (TaI=O25℃ unless otherwise specified) 1.0}
Am
P _{Peak Forward SPurageraCmureretnet r8.3 ms single half sine-wave IFSSMymbol}
Test conditions
M30in
Max
Unit
Am
superimposed on rated load (JEDEC method)
TyRpeicvael Trsheermbarel Raeksdisotawnncev(Noolttaeg2e)
Typical Junction Capacitance (Note 1)
O^Rpe^er^vat^ein^rg^seTe^vm^op^le^tara^gtu^ere^lR^ea^an^kg^ae^{ge current}
RΘJAV(BR)
CJ
TJ ^IR
I_R= 10μA
V_-R5=₅3_to0V₊₁₂₅
4400
V
℃/
120
PF
2_-50₅0_{to +150} nA
℃
Storage Temperature Range
Forward voltage
CHARACTERISTICS
TSTG
V_F
I_F=1mA
- 65 to +175 ₃₈₀
℃
mV
SYMBOL
FM120-MH^IFF⁼M⁴1⁰3^m0-M^AH
FM140-MH
FM150-MH
FM160-MH
1000
FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
MTaoxitmaulmcFaoprawcaridtaVnoclteage at 1.0A DC
VF C_T
V_R=0,f=01.5M0 Hz
0.70
0.855
p⁰F^.9
0.92 Vo
Maximum Average Reverse Current at @T A=25℃
RRatedveDrCsBelorcekcinogvVeorlytagtieme
@T A=125℃
IR
t _rr
I_F=10mA, I_R=I_F=1mA
0.5
10
5
ns
mA
R_L=100Ω
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.