A733 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

WILLAS
SO₁T_.0-_A2_S3_URP_FAla_Cs_E t_Mi_Oc_U-_NE_Tn_Sc_CHa_Op_Ts_TKu_Yla_BAte_RRT_IEr_Ra_Rn_ECs_Ti_Is_FIt_Eo_Rr_Ss_{-20V- 200V}
FM120-M
A733 ^THRU
FM1200-M
Typical Chara^SOc^Dt^-e¹²r³i⁺si^Pti^Ac^Cs^KAGE
Pb Free Prod
F_-4 eatures ^{Static Characteristic}
300
• Batch process design, excellent powerCOdMisMsOiNpation offers
better reverse leakage current and the^Er^Mm^ITa^TEl ^Rresistance.
T =25℃
• Low profile surface mounted a-2p0upAlication^a in order to
-3 _{optimize board space.}
-18uA
• Low power loss, high efficiency. -16uA
200
• High current capability, low forwar-d14vuAoltage drop.
Package_hFE o_—u_—tl_Ii_Cne
COMMON EMITTER
V =-6V
CE
SOD-123H
T =100℃
a
T =25℃
a
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•^-2 High surge capability.
-12uA
• Guardring for overvoltage protection.^-10uA
• Ultra high-speed switching.
-8uA
100
•^-1
Silicon
epitaxial
planar
chip,
metal
-6uA
silicon junction.
•
Lead-free
parts
meet
environmental
-4uA
standards
of
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
I =-2uA
B
•-0 RoHS product for packing code suffix "G"
-0
-2
-4
-6
-8
-10
Halogen free product for packing code suffix "H"
COLLECTOR-EMITTER VOLTAGE V (V)
Mechanical data
CE
0
-0.1
-0.3
-1
-3
-10
-30
COLLECTOR CURRENT I (mA)
C
-100 -150
•-500
Epoxy
:
U
L
9
4
-
V
0^VCr^Ea^sat^te
——
d flam
e^ICr
e
t
a
r
d
a
n
t
-1.2
V_BEsat —— I_C
0.040(1.0)
0.024(0.6)
•_-300 Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
•-100 Polarity : Indicated by cathode band
T =100℃
a
• Mounting Position : Any
• Weight : Approximated 0.011^Ta=g²r⁵a^℃m
-0.8
T =25℃
a
Dimensions in inches and (millimeters)
T =100℃
a
-0.4
-30
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single_-1p₀hase half wave, 60Hz, resistive of inductive loa^β=d¹.⁰
For capa^-0c^.3itive load^-1, derate^-3current b^-y¹⁰20% ^-30
-100 -150
COLLECTOR CURRENT I (mA)
C
-0.0
-0.2
-0.5
-1
-3
-10
-30
COLLECTOR CURRENT I (mA)
C
β=10
-100 -150
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
Marking_-15C₀ ode
I_C —— V_BE
12
2013
14 ^{Cob/ C}1^ib5 ^—— 16^{VCB/ VEB} 18
10
115 120
Maximu-1m00 ReCVcOuM=r-M6reVOnNt EPMeITaTkERReverse Voltage
CE
Maximum RMS Voltage
-30
Maximum DC Blocking Voltage
T =100℃
a
Maximu^-m¹⁰ Average Forward Rectified Current
VRRM
VRMS
VDC
IO
20
30
14
21
10
20
30
40
50
60
28
35
42
Cib
40
50
60
80 ^{fI==10M/IH=z0}100
E
C
56
T =25℃
a
70
80
100
Cob _1.0
150
200
105
140
150
200
Peak For_-w₃ ard Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)T =25℃
a
Typical T^-1hermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
-0.3
Operating Temperature Range
Storage_-0.T₁ emperature Range
-0.2
-0.4
-0.6
-0.8
IFSM
RΘJA
CJ
TJ
TSTG
-1.0
3
-55 to +125
1
-0.1
-0.3
30
40
120
-55 to +150
- 65 to +175
-1
-3
-10
-20
CH^BA^AR^SA^E-C^EMT^ME^IR^TEI^RST^VOIC^LTS^AGE
V (V)
BE
Maximum
300
Forward
Voltage
at
1._f0_T A
D_—C_—
I_C
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
REVERSE VOLTAGE V (V)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
VF
TV^C=^EI=2R5-6℃^V
a
0.50
250
P_C 0—.7—0 T_a
0.5
10
0.85
0.9
0.92
200
NOTES:
1- Measu20r0ed at 1 MHZ and applied reverse voltage of 4.0 VDC.
150
2- Thermal Resistance From Junction to Ambient
100
50
100
-1
-3
-10
-30
-100
2012-06
COLLECTOR CURRENT I (mA)
C
2012-0
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE WT I(L℃)LAS ELECTRONIC CO
a
WILLAS ELECTRONIC CORP.