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A733 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors
WILLAS
SO1T.0-A2S3URPFAlaCsE tMiOcU-NETnScCHaOpTsTKuYlaBAteRRTIErRaRnECsTiIsFItEoRrSs-20V- 200V
SOD-123+ PACKAGE
FM120-M
A733 THRU
FM1200-M
Pb Free Prod
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
TRANSISTO•RLo(PwNpoPw)er loss, high efficiency.
• High current capability, low forward voltage drop.
FEATURE• High surge capability.
• Guardring for overvoltage protection.
z Collecto•r-UBltarasheigVho-sltpaegeed switching.
z Pb-Free• Spilaiccoknaegpietaixsialapvlaanialar bchleip, metal silicon junction.
• Lead-free parts meet environmental standards of
RoHS proMdILu-cStTDfo-r19p5a0c0k/2in2g8 code suffix ”G”
Halogen• RHfroaeHloeSgeppnrrofordeudecutpcfrootrdfpuoacrct kfpoinragpcackocikdnienggsuccfofoidxde"eGsu"sffuixf"fHix" “H”
Mechanical data
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
SOT-23
0.146(3.7)
0.130(3.3)
1. BASE
2. EMITTER
3. COLLECTOR
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Symbol
VCBO
VCEO
VEBO
IC
• Case : MPoaldreadmpelatesrtic, SOD-123H
Value
Unit
,
Co•lleTecrtomri-nBaalsse:PVlaotletadgteerminals, solderable per-6M0IL-STD-750 V
Method 2026
Collector-Emitter Voltage
-50
V
• Polarity : Indicated by cathode band
Em•itMteoru-Bntainseg PVoosltiatigoen : Any
-5
V
Co•llWecetoigrhCt u: Arrpepnrto-xCimonattienduo0u.0s11 gram
-150
mA
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
PC
Collector Power Dissipation
200
mW
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Tj
Junction Temperature
150
Ratings at 25℃ ambient temperature unless otherwise specified.
℃
Tstg SinglSetophraagsee hTaelmf wpaevrea,tu60reHz, resistive of inductive lo-5a5d-.150
℃
For capacitive load, derate current by 20%
ELECTRICAL CHARACRATTEINRGISSTICS (Ta=25℃ SuYnMlBeOsLsFMo1t2h0-MeHrwFMi1s3e0-MsHpFeMc14i0fi-MeHdF)M150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
Marking Code
MaximumPaRreacmureretnetrPeak Reverse Voltage
12
13
14
SymboVlRRM Te2s0t cond3i0tions 40
15
16
18
10
115 120
50 Min 60 Typ 80 Max 100 Unit 150
200
ColleMcatxoimr-ubmaRseMSbrVeoaltkagdeown voltage
V(BR)CBOVRMS IC=1-45uA,IE=201
28
Maximum DC Blocking Voltage
VDC
20
30
40
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA , IB=0
Maximum Average Forward Rectified Current
IO
Emitter-base breakdown voltage
V(BR)EBO
IE= -50uA, IC=0
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
Collesucpteorrimcpuoste-od fofncrauterdrelonatd (JEDEC method)
ICBO
VCB= -60 V , IE=0
35 -60 42
56
70 V 105
140
50
60
80
-50
1.0
100
150
200
V
-5
V
30
-0.1 uA
EmitTteypriccaul Tt-hoefrfmcaul Rrreesnisttance (Note 2)
Typical Junction Capacitance (Note 1)
DC cOuprerreantintggTaeimnperature Range
ColleSctotroarg-eeTmeimttpeerrastuarteuRraantigoen voltage
IEBO RΘJA VEB= -5 V ,
CJ
IC=0
hFE TJ VCE= -6 V-,5I5C=to-+11m2A5
VCE(satT) STG IC= -100mA, IB=- 10mA
40
120
120
- 65 to +175
-0.18
-0.1 uA
4-7555 to +150
-0.3 V
Base-emitter voltageCHARACTERISTICS
VBE(oSn)YMBOLVFCME1=2-06-MVH,ICF=M-1130.0-MmHAFM140-MH FM150--M0H.5F8M160-M-0H.6F2M180-M-0H.F6M81100-MHVFM1150-MH FM1200-
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
TranMsaitxiiomnumfreAqveuraegnecRyeverse Current at @T A=25℃ fT
VCE=-6V,IC=-10mA
IR
50 0.5
MHz
ColleRcatteodr DoCutBplouctkicngapVaolctaitgaence
@T A=125℃Cob
VCB=-10V,IE=0,f=1MHZ
104.5
7
pF
NOTES:
Nois1e- Mfiegausurreed at 1 MHZ and applied reverse voltage of 4.0NVFDC.
2- Thermal Resistance From Junction to Ambient
VCE=-6V,IC=-0.3mA,
Rg=10kΩ,f=100HZ
6
20
dB
CLASSIFICATION OF hFE
Rank
Range
MARK2I0N1G2-06
2012-0
L
120-220
H
220-475
CS
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.