9014XLT1 Datasheet, PDF (2/4 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
1^G.0A^eSⁿUR^eFA^rC^aE^lM^POU^uNT^rS^pC^oHO^sTT^eKY^TBA^rR^aRⁿIER^sRⁱE^sC^tT^oIFI^rE^sRS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
9014xLT1 ^THRU
FM1200-M+
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
ELECTR^•IC^LoopA^wtimL^pirzC^oefH^ibleoA^saR^urdrA^fasC_pceaT_cmeE^o.R^unIS^teT^d I^aC^ppS^lica(T^tioAⁿ=ⁱⁿ2^o5^rodC^{er t}u^onless otherwise noted)
SOD-123H
• Low power loss, high efficiency.
OFF CHAR• AHCigThEcRurISreTnItCcSapability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
• High surge capability.
• Guardring_Cf_ho_ar_ro_av_ce_tr_ev_ro_islt_ta_ig_ce protection.
Symbol
Min
Typ
Max
• Ultra high-speed switching.
Collector-E_•m_Si_it_lt_ie_cr_onBr_ee_pa_itk_ad_xo_iaw_l n_plV_ano_alt_ra_cg_he_{ip, metal silicon junctio}V_n.(BR)_CEO
45
-
-
(I_C=1.0mA^•)
Lead-free parts meet
MIL-STD-19500 /228
environmental
standards
of
Emitter-Ba^•s^Re^oB^Hr^Sea^pk^rod^do^uw^cn^{t fo}V^ro^pl^ata^cg^kie^{ng code suffix "G"}
V(BR)_EBO
5
-
-
Halogen free product for packing code suffix "H"
(I_E=100­A_M) _{echanical data}
Collector-B_•a_Es_pe_oB_xyre_:a_Uk_Ld₉o₄w_-n_V0V_ro_alt_ta_eg_de_{flame retardant}
V(BR)_CBO
50
-
-
0.012(0.3) Typ.
Unit
0.071(1.8)
V ^0.056(1.4)
V
V ^0.040(1.0)
0.024(0.6)
(I_C=100­A^•)^{Case : Molded plastic, SOD-123H}
,
Collector C^•u^Tt^eo^rff^mCⁱⁿu^ar^lr^sen^:Pt ^la(^tV^ed_CB^t=^er4^m0Vⁱⁿ)^{als, solderable per MIL-STD}I_C^-_B⁷_O⁵⁰
Method 2026
Emitter Cu_•to_Pff_oC_lau_rir_tr_ye_:n_It_nd(_iV_caEtBe=_d3_bV_y) _{cathode band}
I_EBO
0.031(0.8) Typ.
-
-
100
0.031(0.8) Typ.
nA
100
nA
Dimensions in inches and (millimeters)
ON CHAR^•A^MC^oT^uEⁿR^tiIⁿS^gT^PIC^oS^{sition : Any}
• Weight : Approximated 0.011 gram
DC Current Gain _{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
(I_C=1_Rm_atA_in,_gV_{s CaEt} =₂5_5℃ V) _{ambient temperature unless otherwise specified.}H_FE
150
-
1000
Colle^Scⁱⁿt^go^lr^e-E^pm^hai^stt^eer^haS^lfa^wtu^ar^va^et^,io⁶n^0HV^zo^,l^rt^ea^sg^ise^{tive of inductive load.}
For capacitive load, derate current by 20%
(I_C=100mA,I_B=5mA)
RATINGS
V_CE
-
-
0.3
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
N^MO^axT^imE^u:^{m Recurrent P}*^{eak Reverse Volta}Q^ge
12
13
14
15
16
RVRRM
20_S 30
T⁴⁰
50
60
18
10
115 120
80
100
150
200
Maximum RMS Volta_Hge_FE
150~300 200~^V4^R0^M0^S 30¹⁴0~600 ²¹ 400~1²0⁸00 ³⁵
42
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
56
70
105
140
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.