9014XLT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
9014xLT1 _THRU
FM1200-M
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
NPN Silicon ^{better reverse leakage current and thermal resistance.}
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
F•EHAigThUcRurErent capability, low forward voltage drop.
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
ƽ^•C^Hoⁱm^ghpl^se^um^re^gn^eta^cr^ay^pto^abi9^li0^ty1^.5.
• Guardring for overvoltage protection.
ƽ_•W_Ue_ltrd_ae_hc_il_ga_hre_-st_ph_ea_et _dth_se_wm_itca_hte_inri_ga_.l of product compliance with RoHS requirements.
•^PS^bil^-ic^Fo^rn^eeep^pi^ata^cx^kia^al^gp^elaⁱn^sa^ar ^vch^aiⁱp^la, ^bm^le^etal silicon junction.
•RLoeHadS-fprereodpuacrttsfomrepeat ceknivnigrocnomdeenstaulfsfitxa”nGda” rds of
• ^HR^Mao^IH^lLo-S^gSep^Tnr^Dod^f-r1u^ec^9et⁵f^0po⁰r^rop^/d2a^uc²k^c8i^tng^foc^ro^pd^ae^cs^kuⁱfⁿfi^gx "^cG^o"^{de suffix “H”}
Halogen free product for packing code suffix "H"
Mechanical data
D^•E^EV^pI^oC^xyE^{: U}M^LA⁹⁴R^-VK⁰IN^raG^tedA^fN^laD^meO^reR^taD^rdE^aR^ntING INFORMATION
• Case : Molded plastic, SOD-123H
• Te^Drm^eviⁱn^ca^els :Plated terminal^Ms,^as^ro^klⁱdⁿe^grable per MIL-S^ShTⁱD^p-^p7ⁱⁿ5^g0,
0.031(0.8) Typ.
0.071(1.8)
0.056(1.4)
SOT– 23
COLLECTOR
3
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
9014QLT1^{Method 2026} 14Q
3000/Tape&Reel
• Polarity : Indicated by cathode band
9014RLT1
14R
• Mounting Position : Any
•
9014SLT1
Weight : Approximated
14S
0.011 gram
3000/Tape&Reel
3000/Tape&Reel
Dimensions in inches and (millimeters)
1
BASE
2
EMITTER
9014TLT1
14T
3000/Tape&Reel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single_Mph_Aas_Xe_IMha_Ulf w_Mave_R, 6_A0H_Tz_I,_Nre_Gsi_Sstive of inductive load.
For capacitive load, derate current by 20%
Ra^Rt^Ain^Tg^INGS
Marking_CC_oo_lld_ee_{ctor-Emitter Voltage}
Maximum Recurrent Peak Reverse Voltage
Maximu^Cm^oR^lleM^cS^toV^ro^-Blta^ag^se^{e Voltage}
Symbo^Sl^YMBOLV^Fa^Ml¹u²e^{0-MH FM130}U^-Mn^Hit^{FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH}
V_{CEO VRRM}
45¹²
20
13 _V 14
30
40
15
50
16
60
18
10
115 120
80
100
150
200
V_{CBO VRMS} 50₁₄
21 ^V 28
35
42
56
70
105
140
Maximu_Em_mD_itC_teB_r-lo_Bc_aki_sn_eg V_Vo_olt_la_tag_ge_e
V_EBO ^VDC
5²⁰
30 _V 40
50
60
80
100
150
200
Maximu_Cm_oA_lleve_cr_ta_og_re_cF_uo_rr_rw_ea_nr_td_-cR_oe_nc_tti_if_nie_ud_oC_uu_nrrent
I_C
IO
100
mA
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimTpoHseEd RonMratAedLloaCd H(JEADRECAmTetEhoEd)RISTICS
IFSM
30
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction CapacitanCceha(Nroatcet1e)ristic
CJ Symbol
Operati_Tn_og_tT_ae_lm_Dp_ee_vra_ictu_ere_DR_isa_sn_ig_pe_{ation FR-5 Board, (1)} TJ
P_D
Storage Temperature Range
TSTG
T_A=25^oC
Max
-55 to +125
225
Unit
mW
40
120
- 65 to +175
-55 to +150
Derate abo^Cv^He^A2^R5^AoCC^TERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130₁-M_.8H FM140-MH_mFM_W15_/0_oC-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
Maximu^Tm^heA^rv^mer^aag^l e^RR^ee^sv^ise^tr^ase^ncC^eu^,rr^Jen^utⁿa^ct^tio@ⁿT^tA^o=^A25^m℃^bient _IR ^R©JA
556
o_C/W
0.5
Rated D_TC_otB_al_loc_Dk_ein_vg_icV_eol_Dtag_ise_sipation @T A=125℃
P_D
10
NOTES:_{Alumina Substrate, (2) TA=25} ^o_C
300
mW
1-
Measured at 1
Derate
a^Mb^Ho^Zv^ae^nd2^a5^popC^lied
reverse
voltage
of
4.0
VDC.
2- Thermal Resistance From Junction to Ambient
2.4
mW/^oC
Thermal Resistance, Junction to Ambient
R_©JA
417
o_C/W
Junction and Storage Temperature
T_J ,T_stg -55 to +150
o_C
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.