8550SXLT1 Datasheet, PDF (2/4 Pages) WILLAS ELECTRONIC CORP – P l a s t i c - E ncapsulate Transistors

WILLAS
SOT_1.0-_A23_SUP_RFl_Aa_Cs_Et_Mic_O-_UE_NTn_Sc_Ca_Hp_OTs_Tu_KYla_Bt_Ae_RRT_IEr_Ra_Rn_Es_Ci_Ts_IFt_IEo_Rr_Ss_{-20V- 200V}
SOD-123+ PACKAGE
FM120-M
8550SxLTT1HRU
FM1200-M
Pb Free Produ
Features
Typical Characteri^Ps^at^ci^kc^as^{ge outline}
• Batch process design, excellent power dissipation offers
better reverse leI_Caka—g—e cuVrr_Ce_E nt and thermal resistance.
•^-90 Low profile surface mounte_-4d_00ua_Applicat_Ci_Oo_Mn_Mi_On_Norder to
500
-80 ^{optimize board space.}
EMITTER
•
Low
power
loss,
high
-360uA
efficiency.
T =25℃
a
-70
•
High
current
capability,
low
fo^-3r²w^0ua^Ard
voltage
drop.
•^-60 High surge capability.
-280uA
h_FE ——
I_{C SOD-123H}
T =100℃
a
T =25℃
a
0.146(3.7)
0.130(3.3)
•_-50 Guardring for overvoltage prote^-2c⁴t⁰i^uo^An.
100
• Ultra high-speed switching.
-200uA
-40
• Silicon epitaxial planar chip, metal_-1s₆i₀l_ui_Acon junction.
•^-30 Lead-free parts meet environmenta_-1l ₂s₀t_ua_Andards of
MIL-STD-19500 /228
-20
•
RoHS
product
for
packing
code
suffix
"G^-8"^0uA
-10 _{Halogen free product for packing code su}I_fBf=_i-_x40_"u_HA _"
M -0 echanical data
10
-0
-2
-4
-6
-8
-10
-12
-1
• Epoxy :^COU^LL^LE9^C4^T-^OV^R-0^EMra^ITt^Te^ERd^Vf^Ola^LTm^AGe^Ere^VtCaErd^(Va⁾ nt
COMMON EMITTER
V =-1V
CE
-10
-100
-500
COLLECTOR CURRENT I (mA)
C
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
• ^-1200
Terminals
V_BEsat ——
I_C
:Plated terminals, solderable
per
,
MIL-STD-75-0500
0.031(_V0._C8_E)_sT_ay_t p. _——
I_C
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
-800
•
Weight
:
A
p
p
r
o
x
i
m
a
t
e^T
=25^℃
d^a 0.0
11
gram
-100
MAXIMUM RA^Ta=T¹⁰I⁰N^℃GS AND ELECTRICAL
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
CHARACTERISTICS_{T a=100} ℃
T
=25^℃
a
For capacitive load, derate current by 20%
-400
-1
Marking Code
RATINGS
-10
-100
COLLECTOR CURRENT I (mA)
C
Maximum Recurrent Peak Re_Iv_Cers_—e_—Volta_Vg_Be_E
Maxim^-5u⁰m⁰ RMS Voltage
β=10
β=10
SYMBOL FM120-MH -F10M130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
-500
-1
-10
-100
-500
12
13
14
COLLE1C5TOR CURR1E6NT
I
C
(mA1)8
10
115 120
VRRM
20
30
40
5_f0_{T ——} 6_I0_C
VRMS
14 ⁴⁰⁰ 21
28
35
42
80
100
150
200
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maxim_-u₁₀m₀ Average Forward Rectified Current
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
100
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
Typical^-1J⁰unction Capacitance (Note 1)
CJ
120
Operating Temperature Range
TJ
-55 to +125
-55 to +150
Storage Temperature Range
TSTG
- 65 toCO+M1M7O5N EMITTER
COMMON EMITTER
V =-6V
CE
V =-1V
CE
T =25℃
a
-1
CHARACTERISTICS
SYMBOL FM120-MH F¹M⁰ 130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
-0
-300
-600
-900
-1200
-1
-10
-100
Maximum Forward Vol_Bta_Ag_Se_E-Ea_Mt _M1_I._T0_EA_R D_VOC_{LTAGE V (mV)}
VF
BE
0.50
COLLECTOR 0C.U7R0RENT
I
C
(mA)
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
Rated D₅₀C Blocking Voltage^{Cob/Cib ——} @^VT^CA^B/=^V1^EB25℃
IR
400
0.5
P_C —— T_{a 10}
NOTES:
1- Measured at 1 MHZ and applieCd reverse voltage of 4.0 VDC.
ib
300
2- Thermal Resistance From Junction to Ambient
C
10
ob
200
2012-06
1
-0.1
2012-0
-1
REVERSE VOLTAGE V (V)
f=1MHz
I =0/I =0
E
C
T =25 ℃
a
-10
-20
100
WILLAS ELECTRONIC COR
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
WILLAS ELECTRONIC CORP.