8550SXLT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – P l a s t i c - E ncapsulate Transistors

WILLAS
SOT1.-02A3SUPRFlaACsEtiMcO-UENnT cSCaHpOsTTuKlYaBtAeRRTIrEaRnREsCiTsIFtIoERrsS -20V- 200V
SOD-123+ PACKAGE
FM120-M
8550SxLT1^THRU
FM1200-M
Pb Free Prod
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
TRANSISTOR_op(P_timN_iP_ze)_{board space.}
FEATURES^{• Low power loss, high efficiency.}
• High current capability, low forward voltage drop.
z Pb-Free_{• H}p_ia_gc_hk_sa_urg_ge_{e c}is_apa_av_bia_lii_tl_ya_. ble
RoHS p^•ro^Gd^uu^ac^rdt^rfⁱⁿo^gr ^fp^oa^{r o}c^vk^ein^rvg^olc^tao^gd^ee^ps^rou^teff^cix^tio”ⁿG^. ”
Halogen^{• U}fr^le^tre^{a h}pⁱr^go^hd^-su^pc^et^ef^do^sr^wp^ita^cc^hkⁱⁿin^g.g code suffix “H”
• Silicon epitaxial planar chip, metal silicon junction.
z Collecto_• r_Lec_au_dr_-fr_re_en_e t_p:_aI_rCts=_m0_e.5_eA_{t environmental standards of}
z Moisture^MS^ILe^-n^STs^Dit^-i¹v⁹i⁵ty⁰⁰L^/e²²v⁸el 1
• RoHS product for packing code suffix "G"
MARKING : _H2_alT_ogY_{en free product for packing code suffix "H"}
Mechanical data
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOT-23
SOD-123H
0.146(3.7)
0.130(3.3)
1. BASE
2. EMITTER
3. COLLECTOR
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Symbol^{• Case : Molded plastic, SOD-123H}Parameter
V_CBO
,
• Termi_Cna_ol_ls_le:_cP_tl_oa_rt_-e_Bd_at_se_erm_Vi_on_la_tals_g,_esolderable per MIL-STD-750
V_CEO
Method 2026
Collector-Emitter Voltage
• Polarity : Indicated by cathode band
V_EBO
Emitter-Base Voltage
• Mounting Position : Any
I_C
• Weigh^Ct ^o: ^lA^lep^cp^tr^oo^rx^Cim^ua^rrt^eeⁿd^t0^-.^C0^o11^ntgⁱⁿr^uam^ous
0.031(0.8) Typ. Value
Unit 0.031(0.8) Typ.
-40
V
-25
V
Dimensions in inches and (millimeters)
-5
V
-0.5
A
P_C
Collector Power Dissipation
0.3
W
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T_j
Junction Temperature
Ratings at 25℃ ambient temperature unless otherwise specified.
150
℃
T_{stg Single phase ha}S_lt_fo_wra_avg_ee_, T₆e_0Hm_zp_,e_rera_sit_su_tr_ive_{e of inductive load.}
-55-150
℃
For capacitive load, derate current by 20%
ELECTRICAL
CHARAC_RAT_TE_INR_GI_SSTICS
(Ta=25℃
unless otherwise specified)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
FM1200
Marking Code
Maximum^PaR^re^ac^murr^ee^tn^et^rPeak Reverse Voltage
12
VRRM ^Sym2^b0^ol
13
14
15
30 ^{Test c}4^o0^nditio5ⁿ0^s
16
18
10
115 120
60 ^Min80 ^Max100 ^Uni1^t50
200
Maximum RMS Voltage
Colle_Mc_at_xo_imr-_ub_mas_De_C b_Blr_oe_ca_kik_nd_go_Vw_oltn_agv_eoltage
VRMS
14
VDC ^V(BR)C2^B0^O
21
28
35
I_3C0= -100μ₄₀A, I_E=0₅₀
42
56
60 ^-40 80
70
105
140
100 ^V 150
200
Colle^Mc^at^xo^imr-^ue^mm^Ait^vt^ee^rar^gb^er^Fe^oa^rk^wd^aro^dw^Rn^ecv^tifo^iel^dta^Cg^ue^rrent
Peak Forward Surge Current 8.3 ms single half sine-wave
Emitstuepre-rbimapsoesebdroenaraktdedolwoand (vJoEDltEaCgemethod)
Typical Thermal Resistance (Note 2)
ColleTcyptoicralcJuunt-cotioffncCuarpraecnitatnce (Note 1)
Operating Temperature Range
ColleSctotroargecTuet-mopfefrcatuurrereRnatnge
IO _V(BR)CEO
IFSM
V_(BR)EBO
RΘJA
CJ ICBO
TJ
TSTG ICEO
I_C =-1mA, I_B=0
I_E= -100μA, I_C=0
V_CB= -40V, I_E=0
-55 to +125
V_CE= -20V, I_B=0
1.0 _-25
30
-5
40
120
- 65 to +175
V
V
-0.1 μA
-55 to +150
-0.1 μA
Emitter cut-off curreCnHtARACTERISTICS
Maximum Forward Voltage at 1.0A DC
μ ^SYMBOL I^FE^MB¹O^{20-MH FM}V¹³E⁰B^-M=^H-3^FMV¹, ⁴I⁰C^-=^M0^{H FM150-MH FM160-MH FM180-MH F}-0^M.¹1^100-MH A^{FM1150-MH FM1200-}
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
DC cRuarterednDtCgBaloincking Voltage
@T A=125℃
IR ^hFE(1)
V_CE= -1V, I_C= -50mA
0.₁5 ₂₀
400
10
NOTES:
h_FE(2)
V_CE= -1V, I_C= -500mA
50
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Collector-emitter saturation voltage
2- Thermal Resistance From Junction to Ambient
V_CE(sat)
I_C=-500mA, I_B= -50mA
-0.6 V
Base-emitter saturation voltage
V_BE(sat)
I_C=-500mA, I_B= -50mA
-1.2 V
Transition frequency
CLASSIFICATION OF h_FE(1)
Rank 2012-06
Range
f_T
L
120-200
V_CE= -6V, I_C= -20mA
150
f=30MHz
MHz
H WILLAS ELECTRONIC CO
200-350
2012-0
WILLAS ELECTRONIC CORP.