8050PLT1 Datasheet, PDF (2/7 Pages) WILLAS ELECTRONIC CORP – NPN General Purpose Transistor

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ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
–
(IC=1.0mA)
Emitter-Base Breakdown Voltage
(IE=100µΑ)
V_(BR)EBO
5
–
Collector-Base Breakdown Voltage
(IC=100µΑ)
V(BR)CBO
40
–
Collector Cutoff Current (V_CB=35V)
I_CBO
–
–
Emitter Cutoff Current (VEB=4V)
IEBO
–
–
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Charateristic
Symbol Min Typ Max
DC Current Gain
IC=100mA,VCE=1V
Collector-Emitter Saturation Voltage
hFE
100
-
300
(IC=800mA, IB =80mA)
VCE(sat)
-
-
0.5
Max
–
–
–
150
150
Unit
V
Unit
V
V
V
nA
nA
Classification of h_FE
Rank
0DUNLQJ
Range
P
80 P
100~200
Q
1YC
150~300
2015.0ϵ
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