8050PLT1 Datasheet, PDF (1/7 Pages) WILLAS ELECTRONIC CORP – NPN General Purpose Transistor

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PRIMARY CHARACTERISTICS
P_D
225mW
V_CEO
25V
I_C
800mA
h_FE
100~300
T_J,Max
150℃
FEATURES
 High current capacity in compact
package.
IC = 0.8A.
 Epitaxial planar type.
 Moisture Sensitivity Level 1
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-continuoun
SOT-23 PACKAGE
Marking Code : 80P/1YC
Ex : 8050PLT1
COLLECTOR
3
80P
1
BASE
2
EMITTER
MECHANICAL DATA
 Case：Molded plastic,SOT-23
 Polarity：Shown above
 Terminals :Plated terminals,
solderable per MIL-STD-750,Method
2026
 Epoxy : UL94-V0 rated flame
retardant
Symbol
V_CEO
V_CBO
V_EBO
IC
Max
25
40
5
800
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Symbol
P_D
R θJ A
P_D
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R θJ A
T j,T St g
417
-55 to +150
°C/W
°C
2015.0ϵ
www.willas.com.tw
Rev.>0Ï®