2SK3019TT1 Datasheet, PDF (2/3 Pages) WILLAS ELECTRONIC CORP – SOT-523 Plastic-Enc apsulate MOSFETS

WILLAS
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FM120-M+
2NSK7030021T9HTRT1U
FM1200-M+
Features
Typical CSOhDa-12r3+acPAtCeKArGiEstics Pb Free Product
Package outline
•
Batch
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process
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•
Low
200
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n
t
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d
application
in
order
to
3.0V
200
optimize ^Pb^uo^lsa^edrd space.
• Low power loss, h³i^.5g^Vh efficiency.
100
•
High
160
current
capability,
low
forward
voltage
drop.
Transfer Characteristics
SOD-123H
0.146(3.7)
0.130(3.3)
V_DS=3V
T_a=25℃
Pulsed
0.012(0.3) Typ.
• High surge capability.
z ^{• Guardring for overvoltage protection.}
30
z ^{• Ultra 1h2i0gh-speed switching.}
• Silicon epitaxial planar chip, metal silicon junction. ^2.5V
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
10
MIL-S⁸T⁰D-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mech⁴⁰anical data
2.0V
• Epoxy : UL94-V0 rated flame retardant
• Case : ₀Molded plastic, SOD-123H
V_GS=1.5V
0
1
2
3
4
,5
• Terminals :Plated terminals, solderable per MIL-STD-750
DRAIN TO SOURCE VOLTAGE V_DS (V)
Method 2026
3
0.040(1.0)
0.024(0.6)
0.0131(0.8) Typ.
0
1
0.031(0.8) Typ.
2
3
4
GATE TO SOURCE VOLTAGE V_GS (V)
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any R_DS(ON) —— I_D
• Weigh⁵t⁰: A_Tap₌p₂₅r_℃oximated 0.011 gram
15
Pulsed
3_M0 _{AXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
12
Ratings at 25℃ ambient temperature unless otherwise specified.
R_DS(ON) —— V_GS
T_a=25℃
Pulsed
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
10
9
Marking Code
RATINGS
V_GS=2.5V ^{SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT}
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage V_GS=4V VRRM
20
30
Maximum RMS Voltage
VRMS
14
21
40 ⁶ 50
28
35
60
80
I_D=100mA
42
56
100
70
150
200 Volts
105
140 ^Volts
3
Maximum DC Blocking Voltage
VDC
20
30
40
50
3
60
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
IO
I_D=50mA 1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
1
IFSM
superimposed on rate¹ d load (JED³EC method) ¹⁰
30
100
200
0
30
Amps
0
4
8
12
16
20
Typical Thermal Resistance (Note 2) DRAIN CURRENT I_D R(mΘAJ)A
GATE 4T0O SOURCE VOLTAGE V_GS (V)
℃/W
Typical Junction Capacitance (Note 1)
CJ
120
PF
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
I_S —— V_{SD TSTG}
- 65 to +175
℃
200
100 C^TPH^a_u=lA_s2e5R_d^℃ACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Averag₃e₀ Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAmps
10
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistan³ce From Junction to Ambient
1
0.3
0.1
0.2
0.4
0.6
0.8
1.0
2012-06
SOURCE TO DRAIN VOLTAGE V_SD (V)
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.