2SK3019TT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – SOT-523 Plastic-Enc apsulate MOSFETS

WILLAS
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SOD-123+ PACKAGE
FM120-M+
2SK3019^TT^HT^R1^U
FM1200-M+
Pb Free Product
N-c_Fh_ean_an_te_ul _rM_eO_sSFET
FE•ABTaUtcRh EprSocess design, excellent power dissipation offers
Package outline
z ^bL^eo^ttw^er o^ren^v-^er^re^ss^ei^ls^et^aa^kn^ac^ge^{e current and thermal resistance.}
• Low profile surface mounted application in order to
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SOD-123H
SOT-523
z ^{• L}L^oo^ww^pov^wo^elt^ra^log^se^s,d^hr^igiv^he^em^ffica^iekⁿe^cs^y.this device ideal for portable equipment
• High current capability, low forward voltage drop.
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z ^{• G}E^ua^as^rdy^ritⁿo^g p^foa^r r^oa^vl^ele^rvl ^{oltage protection.}
z ^{• U}_P^lt_b^ra_-F^h_rⁱ_e^gh_e^-s_p^p_a^e_c^e_k^d_a^s_g^w_e^itc_is^hi_aⁿ_v^g._ailable
• Silicon epitaxial planar chip, metal silicon junction.
• L^Re^oad^H-^Sfre^pe^ropa^dr^uts^ctm^foee^r t^pe^an^cv^kirⁱⁿon^gm^ce^on^dt^eal ^ss^uta^ffn^ixda^”r^Gd^”s of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. GATE
2. SOURCE
1
0.071(1.8)
0.056(1.4)
3. DRAIN
M_HI_aL-_loS_gT_eD_n-1_f9_re5_e00_p/_r2_o2_d8_{uct for packing code suffix “H”}
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
Equivalent circuit
• Epoxy : UL94-V0 rated flame retardant
MO_•S_CF_aE_seT_:
M_MoA_ldX_eI_dM_pU_laM_sticR_, A_SOT_DIN_-1G₂₃S_H(Ta
=
25°C
unless
otherwise
noted)
0.031(0.8) Typ.
Sym_• b_To_el_rminP_aa_lsra_:Pm_lae_tt_ee_dr _{terminals, solderable per MIL-STD-750}V^, alue
Units
0.040(1.0)
Marking: KN ^0.024(0.6)
0.031(0.8) Typ.
VDS
Drai^Mn-^eS^to^hu^or^dc²e⁰V²o⁶ltage
30
V
• Polarity : Indicated by cathode band
VGSS
Gate-Source Voltage
• Mounting Position : Any
ID
Continuous Drain Current
• Weight : Approximated 0.011 gram
±20
0.1
Dimensions in inches and (millimeters)
V
A
RθJA
Thermal Resistance, Junction-to-Ambient
833
℃ /W
PD
M_PoA_wX_eI_rM_DU_isM_sipR_aA_tioT_nINGS AND ELECTRICAL CHA_0.R₁₅ACTERIS_WTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Sing^Tle^J phase hal^Jf ^uwⁿa^cv^te^io, ⁿ60^TH^ez^m, r^pe^esi^rs^ati^tv^ue^reof inductive load.
150
℃
For _Tca_stp_gacitive lo_Sad_to, _rd_ae_gra_ete_Tc_eu_mrr_pe_ent_rab_ty_u2_re0%
-55~+150 ℃
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Mark^Ming^OC^Sod^Fe^{ET ELECTRICAL CHARACTERISTICS}12^(Ta=21⁵3^{℃ unl}1^e4^{ss oth}1^e5 ^rwise16^specifi1^e8^d) 10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maxim_Paum_raR_mM_eS_teV_roltage
Maxim_Ou_ffm_CD_hC_aB_ralo_cc_tk_ein_rg_isV_to_iclta_sge
Maximum Average Forward Rectified Current
Drain-Source Breakdown Voltage
Symb^Vo^Rl^MS Tes¹t⁴Condit²i¹on ²⁸
VDC
20
30
40
IO
VDS
VGS = 0V, ID = 10µA
35
M⁴i²n Ty⁵⁶p M⁷a⁰x Un¹it⁰s⁵
140 ^Volts
50
60
80
100
150
200 ^Volts
1.0
30
Amps
V
Psuepaekr_ZiFmeopr_rwo_osaeGrdd_aSo_tnuerrga_Vete_oCd_lu_tlaorragedn_et(J8_DE.3rDamE_inCs s_Cmineugtl_rheroehd_na) l_tf sine-wave_{IDSSIFSM VDS =30V,VGS = 0V}
30
1
µA
Amps
Typic^Gal^aT^tehe^–rm^Sa^ol^uR^re^cs^eis^lt^ean^ac^ke^a(^gN^eot^ce^u2^r)^rent
IGSS_RΘJA VGS =±20V, VDS = 0V
40
±1
µA
℃/W
Typic_Gal_aJ_tu_en_Tct_hio_rn_eC_shap_oa_ldcit_Van_oc_lte_a(_gN_eote 1)
VGS(th^C) ^J VDS = 3V, ID =100µA
0.8¹²⁰
1.5
V
PF
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Stora_Dge_raT_inem_-Sp_oe_ura_rt_cu_ere_OR_nan_-Rge_esistance
RDS(o^Tn^S) ^{TG VGS = 4V, ID = 10mA}
- 65 to +175
8
Ω
℃
VGS =2.5V,ID =1mA
13
Ω
Forward Tran^Cs^Hc^Ao^Rn^Ad^Cu^Tc^Eta^Rn^ISc^Te^ICS
Maximum Forward Voltage at 1.0A DC
gF^SS^YMBOLV^FD^MS¹²=⁰3^-MV^H,
VF
F_IDM1₌30₁-M₀H_mF_AM140-MH
0.50
FM150-MH FM₂16₀0-MH
0.70
FM180-MH FM1100-MH
0.85
FM_m1₀1_S.5₉0-MH
FM1200-MH
0.92
UNIT
Volts
Maxim^Du^ym^naA^mveⁱr^cag^Ce^hR^ae^rv^ae^crs^te^eC^riu^sr^trⁱe^cn^st ^*at @T A=25℃
IR
Rated_InD_pC_utB_Clo_ack_pin_ag_ciV_tao_nlta_cg_ee
@T A=125℃ _Ciss
0.5
mAmps
10 ₁₃
pF
NOTEOS:utput Capacitance
Coss
1- Me_Ras_eu_vre_ed_ra_st_e1_TM_rH_aZ_nsan_fed_ra_Cpp_alie_pd_ar_ce_iv_taer_nse_cevoltage of 4.0_CVD_rsC_s .
2- Thermal Resistance From Junction to Ambient
Switching Characteristics*
VDS =5V,VGS =0V,f =1MHz
9
pF
4
pF
Turn-On Delay Time
td(on)
15
ns
Rise Time
tr
VGS =5V, VDD =5V,
35
ns
Turn-Off Delay Time
td(off)
ID =10mA, Rg=10Ω, RL=500Ω,
80
ns
Fall Time
tf
2_*0_T1_h2_e-_s0_e6_{parameters have no way to verify.}
80
ns
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.