2SC4081XT1 Datasheet, PDF (2/3 Pages) WILLAS ELECTRONIC CORP – SOT-323 Plastic-Encapsulate Transistors

WILLAS
FM120-M+
2SC4081xTT1HRU
SO₁T_.0-_A3_S2_U3_RFP_ACla_E s_Mt_Oi_Uc_N-_TE_Sn_CHc_Oa_Tp_TKs_Yu_Bl_Aa_Rt_Re_IET_Rr_Ra_En_CTs_IFi_Is_ERto_S r_-2s_{0V- 200V}
FM1200-M+
Typical C^Sh^Oa^Dra^-1c²³te⁺ri^Ps^Ait^Cic^Ks^AGE
Pb Free Product
Static Characteristic
12
Features
COMMON
•
Batch
process
design⁴,⁰e^uAxcellent
power
EMITTER
dissi_Tp₌a₂t₅i_℃on
offers
a
better reverse leakage c3u6rurAent and thermal resistance.
9
• Low profile surface mounted32uaApplication in order to
1000
Package
o
u t^hFE
l
——
ine
I_C
T =100℃
a _SOD-123H
optimize board space.
28uA
T =25℃
a
• Low power loss, high efficiency. _24uA
•
6
High current
capability,
low
forward
v₂o_0ul_Atage
drop.
100
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
16uA
• Guardring for overvoltage protection.
•
3
Ultra high-speed
switching.
12uA
8uA
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards^IBo⁼⁴f^uA
MIL-S⁰ ₀TD-19500 /₂228
4
6
8
• RoHS product fo_Cr_OLp_La_Ec_Ck_Ti_On_Rg_-Ec_Mo_ITd_Te_ERs_Vu_Off_Li_Tx_A"_GG_E " _{V (V)}
CE
Halogen free product for packing code suffix "H"
10
0.5
1
0.071(1.8)
0.056(1.4)
COMMON EMITTER
V =6V
CE
10
100 150
COLLECTOR CURRENT I (mA)
C
Mech_1.0 anical data^VBEsat ^{—— I}C
1
V_CEsat —— I_C
0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
0.024(0.6)
• Case : Molded plastic, SOD-123H
0.8
,
• Terminals :Plated termin_Ta₌ls₂₅,_℃solderable per MIL-STD-750
a
Method 2026
T =100℃
• Pola^0.r⁶ity : Indicated by cathode band ^a
0.1
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Wei₀g_.4ht : Approximated 0.011 gram
T =100℃
a
T =25℃
a
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
β=10
Ratings at 250℃.2 ambient temperature unless otherwise specified.
0.01
0.1
1
10
100 150
0.1
Single phase half wave, 60Hz, resistive of inductive load.
COLLECTOR CURRENT I (mA)
C
For capacitive load, derate current by 20%
1
10
COLLECTOR CURRENT I (mA)
C
β=10
100 150
150
100
Marking Code
RATINGS ^{IC —— VBE}
Maximum Recurrent Peak Reverse Voltage
SYMBOL FM120-MH FM130-M¹⁰H⁰ FM140-MH FM150-M^CH^ob/F^CM^ib160^—-M^—H F^VM^C1^B8^/ 0^V-^EM^BH FM1100-MH FM1150-MH FM1200-MH U
12
13
14
15
16
f=1MHz
18
I1=00/I =0
115
120
E
C
VRRM
20
30
40
50
60
80
1^Ta0⁼²0^5℃
150
200 V
Maximum RMS Voltage
Maximum DC B¹l⁰ocking Voltage
T =100℃
a
VRMS
14
21
28
35
42C_ib
56
70
105
140 ^V
10
VDC
20
30
40
50
60
80
100
150
200 ^V
Maximum Average Forward Rectified Current
IO
1.0
A
C
T =25℃
ob
Peak Forward Surge Current 8.3 ms single half sine-w^a ave
1
IFSM
1
30
A
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
Operating Tem0p.1erature Range
0.2
0.4
0.6
Storage Temperature Range_{BASE-EMMITER VOLTAGE}
COMM_CON_J EMITTER
V =6V
T ^CE
J
0.8
1.0
V (VT) STG
BE
-55 to +1_0.125
0.1
120
-55 to +150
1
REVERSE^-V⁶O⁵LT^tA^oG⁺E¹⁷V⁵ (V)
10
20
1000 ^{CHARACTERISTICfTS —— IC}
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-M₂₅H₀ FM140-MH FM150-MH^PF^CM1^—60^—-MH ^TF^aM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
IR
200
0.5
m
10
NOTES:
150
1- Measured at 1₁₀₀MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
100
10
1
2012-06
2012-
10
COLLECTOR CURRENT I (mA)
C
V =12V
CE
T =25℃
a
50
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.