2SC4081XT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – SOT-323 Plastic-Encapsulate Transistors

WILLAS
FM120-M+
2SC4081xT^T1^HRU
SO₁T_.0-_A3_S2_U3_RFP_ACl_Ea_Ms_Oti_Uc_N-_TE_Sn_CHc_Oa_Tp_TKs_Yu_Bl_Aa_Rt_Re_IET_R r_Ra_ECn_Ts_IFi_Is_ERto_S r_-2s_{0V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
TRANSI^•S^BT^aO^tcR^{h p}(^rN^oP^ceN^ss) ^{design, excellent power dissipation offers}
better reverse leakage current and thermal resistance.
FEATUR•ELSow profile surface mounted application in order to
z _•E_Lox_opwtc^ime_pil_ozl_we^een^brot_laoh^rs_F^ds_E,shpli_ian_gche^eea^. _fr_fii_ct_iy_ency.
z •PHbig-hFcruererepntaccakpaabgileityi,sloawvfaoriwlaabrdlevoltage drop.
•_RH_oig_Hh _Ssu_prg_re_oc_da_up_ca_tb_fil_oit_ry._{packing code suffix ”G”}
• Guardring for overvoltage protection.
•^HU^altr^loa^gh^eigⁿh-^fs^rp^ee^eed^ps^row^ditc^uh^cin^t g^fo. ^{r packing code suffix “H”}
• Silicon epitaxial planar chip, metal silicon junction.
MAXIMU^•M^LeR^adA^-fT^reIN^{e p}G^aS^rts(T^ma^e=^e2^{t e}5ⁿ℃^viru^onn^mle^esⁿs^talo^st^th^ane^dr^aw^rdis^s e^ofnoted)
MIL-STD-19500 /228
Symbo^• l^{RHoaHloSgepnrofrdeuectpfroo}P^rda^pur^aca^ct m^kfoine_rgpte_acr^{ockdiengsucfofidxe"Gsu"ffix} _"V_Ha_" lue
Unit
V_{CBO Mec}C_hol_alec_nto_ir_c-B_aa_ls_de V_ao_tl_atage
60
V
V_CEO • EpoCxyol:leUcLto9r4--EVm0 irtatetredVofllatamgeeretardant 50
V
V_EBO
I_C
P_C
T_J
T_stg
• Cas_Ee_m: M_itto_el_rd_-Bed_asp_ela_Vs_otic_lt,_aS_geOD-123H
7
V
,
• Term_Ci_on_la_lels_ct:_oP_rla_Cte_ud_rrete_nr_tm_-Cin_oa_nls_t,_ins_uo_old_ue_srable per₁M₅₀IL-STD-750 _mA
Method 2026
Collector Power Dissipation
200
mW
• Polarity : Indicated by cathode band
Junction Temperature
• Mounting Position : Any
150
℃
•
Storage Temperature
Weight : Approximated 0.011
gram
-55-150
℃
Package outline
SOD-123H
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. EMITTER
3. COLLECTOR
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
ELECTRICAL CMHAAXRIMAUCMTERRAITSINTGICSSA(NTaD=2E5L℃ECuTnRleICsAsLoCthHeArRwAisCeTsEpReISciTfiIeCdS)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phaPsearhaamlf wetaevre, 60Hz, resistive of inductiSveymloabdo. l
Test conditions
Min Typ Max Unit
For capacitive load, derate current by 20%
Collector-base break_Rd_Ao_Tw_INn_Gv_Soltage
V_{(BSRY)CMBBOOL}
F^ICM⁼12⁵0⁰-M^μH^AF^,IM^E=13⁰0-MH FM140-MH
60
FM150-MH FM160-MH
FM180-MH
FM1100-MH
V
FM1150-MH FM1200-MH
U
C^MMol_aal^rxe^kimcⁱⁿt_ugo_mCr-^oRe^dem^ecuit_rt_ree_nr_tb_Pr_ee_aa_kk_Rd_eo_vew_rsn_e v_Vo_oll_tt_aa_gg_ee
V_(BRV)CREROM I_C=¹²1²⁰mA,I_B=¹³0³⁰
14
40
15
50
50¹⁶⁶⁰
18
80
10
100
V
115
150
120
200 V
Em^Mai^xtt^imer^u-^mba^Rs^Me^Sb^Vr^oe^lta^ak^gedown voltage
Maximum DC Blocking Voltage
V_(BR^V_)E^R_B^M_O^S I_E=¹5⁴0μA,I_C=²¹0
28
35 ₇ 42
VDC
20
30
40
50
60
56
70 _V 105
140 ^V
80
100
150
200 ^V
CMolalxeimctuomr Acvuetr-aogfef FcourwrraerdntRectified Current
I_CBOIO V_CB=60V,I_E=0
1.0
0.1
μA
A
Em^Pei^at^kte^Fr^orc^wu^art^d-o^Sf^uf^rgc^eu^Cr^ur^re^renⁿt^{t 8.3 ms single half sine-wave} IEB^IFO^SM VEB=7V,IC=0
superimposed on rated load (JEDEC method)
30
0.1
μA
A
D^TC^ypc^icu^ar^lr^Te^hn^et^rmg^aa^li^Rn^{esistance (Note 2)}
h_F^R_E(^Θ₁₎^JA V_CE=6V,I_C=1mA
120 ⁴⁰
560
℃
Typical Junction Capacitance (Note 1)
CJ
120
C^Oo^pll^ee^rc^attⁱo^ngr-^Te^em^mi^pt^ete^rar^tus^ra^et^Ru^arⁿa^gt^eion voltage
V_CE(^T_sa^J_t) I_C=50mA^-5,I⁵_B=^to5⁺m¹A²⁵
-5₀5_.t₄o +150 _V
Storage Temperature Range
TSTG
- 65 to +175
Transition frequency
f_T
V_CE=12V,I_C=2mA,f=30MHz
180
MHz
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
C^Mo^all^xe^imct^uo^mr ^Fo^ou^rwtp^aru^dt^Vc^oa^ltp^aga^ec^ait^ta¹n^.0c^Ae^DC
C_o^V_b ^F V_CB12V,I_E=0,f=1^0.M⁵⁰Hz
0.70
0.8₃5_.5
pF ^0.9
0.92 V
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
m
10
CLASSIFICATION OF
NOTES:
h_FE(1)
R1a- Mnekasured at 1 MHZ and applied reverse voltage oQf 4.0 VDC.
R
S
R²a^{- T}n^hg^ere^{mal Resistance From Junction to Ambien}1^t 20-270
180-390
270-560
Marking
BQ
BR
BS
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.