1N4148W Datasheet, PDF (2/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

WILLAS
SOD-123 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
1N4148^FW^M120-M+
BAV16_FW_M1^T₂^H₀^R₀^U_-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
Typical Characteristics ^{better reverse leakage current and thermal resistance.}
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power l_Fo_oss_r,_wh_aig_rh_deffi_Cci_he_anc_ray._cteristics
1•00H0igh current capability, low forward voltage drop.
10000
0.146(3.7)
Reverse C^0.h¹³a⁰⁽³r^.a³⁾cteristics_{0.012(0.3) Typ.}
• High surge capability.
• Guardring for overvoltage protection.
•10U0ltra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
1000
Ta=100 ^oC
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
1^M0 ^{IL-STD-19500 /228}
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
100
M₁echanical data
• Epoxy : UL94-V0 rated flame retardant
Ta=25 ^oC
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
0.1
,
• Terminals :Plated terminals, solderable per MIL-STD-750
10
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
•0.0P1olarity : Indicated by cathode band
0.0
0.4
0.8
1.2
1.6
• Mounting PoFsOitiRoWn :AARnDyVOLTAGE V (V)
F
• Weight : Approximated 0.011 gram
1
Dimensions in inches and (millimeters)
0
20
40
60
80
100
REVERSE VOLTAGE V (V)
R
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half waCvaep, 6a0cHitza, nrecseistCivehoafriancdutectrivisetliocasd.
Power Derating Curve
For capa¹c^.6itive load, derate current by 20%
Ta=25℃
600
RATINGS
SYMBO^f=L^1MF^HM^z120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Marking C1o.4de
12
13 ⁵⁰⁰ 14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maximum RMS Voltage
Maximum¹D^.2C Blocking Voltage
VRMS
14
21 ⁴⁰⁰ 28
35
42
VDC
20
30
40
50
60
56
70
105
140 ^Volts
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
IO
300
1.0
Amp
Peak Forw¹a^.0rd Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
200
30
Amp
Typical Thermal Resistance (Note 2)
0.8
Typical Junction Capacitance (Note 1)
Operating Temperature Range
RΘJA
CJ
TJ
100
-55 to +125
40
120
-55 to +150
℃/W
PF
℃
Storage T₀e_.6mperature Range
0
4
8
TSTG
12
16
20
0
- 65 to +175
℃
0
25
50
75
100
125
150
CHARRAECVTEERRSISETVICOSLTAGE
V
R
S(VY)MBOL FM120-MH FM130-MH FM140-MH FM^A1^M50^B-M^IEH^NF^TM^T16^E0^M-M^PH^EF^RM^A1^T80^U-^RMH^E FM^T1_a100⁽-^℃MH⁾FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAm
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.