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1N4148W Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES
WILLAS SOD-123 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
1N4148WFM120-M+
BAV16WFM1T2H0R0U-M+
FAST SWITCHING DIODE
SOD-123+ PACKAGE
FEATU•FRBeEataScht
ures
process
d
esi
gn,
exc
ellent
pow
er
dissipatio
n
offers
Package outline
SOD-123
z Fasbt eSttweritrcehveinrsgeSlepaekeagde current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
z SurfoapctiemiMzeobuonatrdPsapcakcae.ge Ideally Suited for Automatic Insertion
+
z Fo•rLGowenpeowraelr Ploussrp, hoisgeh eSffwiciitecnhciyn. g Applications
• High current capability, low forward voltage drop.
z Hig• hHiCghosnudrguecctaanpacbeility.
z Pb•-GFuraeredrpinagcfokraogveerviosltaagveapirloatbecletion.
0.146(3.7)
0.130(3.3)
Pb Free Product
0.012(0.3) Typ.
Ro•HUSltraphroigdhu-scpteefodrswpaitcchkiningg. code suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
Ha•loLegaedn-frfereepeaprtrsomdeuect tenfovirropnamceknitnagl stcaonddaerdssuofffix “H”
MARK•INRMGoIHL:-SSBpTArDoVd-1u1c96t5fW0o0r =p/2aTc26k8i,n1gNc4od1e4s8uWffix="TG4"
Halogen free product for packing code suffix "H"
MaximMumecRhatainngiscaanl ddaEtleactrical Characteristics, Single Diode @Ta=25℃
• Epoxy : UL94-V0 rated flame retardant
Parameter
Symbol
• Case : Molded plastic, SOD-123H
Non-R•epTeertmitiivnealPs e:PalkatRedevteerrmseinValosl,tsaogleder
abl
e
pVeRr MM
I
L
-STD-7
,
50
Limit
0.031(0.8) Typ.
100
0.071(1.8)
-0.056(1.4)
0.040(1.0)
0.024(0.6)
Unit
0.031(0.8) Typ.
V
Peak Repetitive PeMaekthRoedv2e0r2s6e Voltage
• Polarity : Indicated by cathode band
Working Peak Reverse Voltage
• Mounting Position : Any
DC Blocking Voltage
• Weight : Approximated 0.011 gram
VRRM
VRWM
VR
Dimensions in inches and (millimeters)
75
V
RMS Reverse Voltage
VR(RMS)
53
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
FRoartiwngasrdat C25o℃ntianmuobiuenst Cteumrpreernatture unless otherwisIeFMspecified.
300
mA
ASvinegrleagpheaRseechatilfiwedavOe,u6t0pHuzt, Creusrisrteivnetof inductive loaIOd.
150
mA
For capacitive load, derate current by 20%
Peak Forward Surge Current @t=1.0μs
Marking Code
RATINGS
@t =1.0s
2.0
SYIFMSBMOL
FM120-MH
FM130-MH FM140-MH
FM150-MH
1.0
FM160-MH
FM180-MH
FM1100-MH
FAM1150-MH FM1200-MH
UN
12
13
14
15
16
18
10
115 120
MPaoxwimeurmDRisecsuirpreanttioPneak Reverse Voltage
VPRRdM
20
30
40
5500 0
60
80
100 mW150
200 Vol
MTahxeimrmumalRRMeSsVisolttaagnece from Junction
VRMS
14
21
28
35
42
56
70
105
140 Volt
Maximum DC Blocking Voltage
to Ambient
Maximum Average Forward Rectified Current
RVDθJCA
20
30
40
2550 0
60
80
100 ℃/W150
200 Volt
IO
1.0
Am
Junction Temperature
Tj
150
℃
Peak Forward Surge Current 8.3 ms single half sine-wave
sSutpoerrimagpoeseTdeomn rpaeterdaltouadre(JEDEC method)
TIFSSTMG
30
-55~+150
Am
℃
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/W
ETlyepcictarl iJcunacltioRnaCtainpagcistan@ceT(Nao=te215)℃
CJ
120
PF
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage TemperatPuraerRaamnegeter
SyTmSbTGol Min Typ Max Unit - 65 to +175 Conditions
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
MFaoxrimwuamrdAvveoraltgaegReeverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SVYFM1BOL FM120-MH FM130-MH FM1400.-7M1H5FM150-MVH FM160-MH FM180-MHIFF=M11m10A0-MH FM1150-MH FM1200-MH UNI
VFV2F
0.50 0.855
0V.70
0IF.8=510mA
0.9
0.92 Vol
VFI3R
0.5
1.0
V
10
IF=50mA
mAm
NOTES:
VF4
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDCIR. 1
2R- TehveermrsaleRcesuisrtraencnet From Junction to Ambient
IR2
1.25
V
1
μA
25
nA
IF=150mA
VR=75V
VR=20V
Capacitance between terminals
CT
Reverse recovery time
trr
2
pF
4
ns
VR=0V,f=1MHz
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.