SESD5L5.0T1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – ESD Protection Diodes with Ultra−Low Capacitance

WILLAS
FM120-M+
SESD5L5.0TT1HRU
ESD_1.0P_Ar_So_Ute_Rc_FAti_Co_En_MD_Oio_Ud_Ne_Ts_SCw_Hi_Oth_TTU_Kl_Ytr_Ba_A−L_RRo_Iw_{ERCRaEpCaTcIFitIaEnRSce-20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
rEreeTxqshcpueeoilrnl^SeesEn^{•••}_euStUGHlttDcir_liumtgal5_raa^h−_a^Le_rmdl^s_,ho_rupiimwi^s_grinn^ghg_ad^e_g-cke_sfa_ocespcpi^are_agat^poe_phnc^avd_aeeiebtbsd_sa_riei^lvwnⁱ_lt^t_ioco_iypttley^.c_at^p,_{ahrfrgtilrosnoe}ot_{gwmeip.dcretocEatavelSpoc}Dafl_totci^a_{oriagtnanEe.ndSsceDetrn,asnpliotsriwoivetenelctectaoviokmonalpgtaooeg,nneeadnneetvdsseiftnghatnsasst.t}
where b^•o^Sar^ild^ics^opⁿa^ec^pe^iti^as^xa^iat ^la^pp^larⁿem^ari^cu^hm^ip.^,B^me^ec^ta^au^l s^se^ilio^cf^onits^julⁿo^cw^tiocⁿa^.pacitance, it is
suited fo^•r^LMu^eIs^aLe^d-Si^-n^fTreDh^ei_-g_1ph_9a5rf^tr_0se₀q^m/u_2ee_2en_8tc^eyⁿd^ve^irs^oiⁿg^mns^ensu^tac^lh^sa^tasⁿU^daS^rB^ds2^o.0^f high speed and
antenna_•l_Rin_oe_Ha_Sp_pp_rl_oi_dc_ua_cti_to_fon_rs._{packing code suffix "G"}
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
2
Specifica^Ht^aio^lon^geFⁿe^fa^retu^er^pe^rs^od: ^{uct for packing code suffix "H"}
• Ultra^MLo^ew^cC^ha^apaⁿcⁱit^can^ac^le^d0.^a5 ^tp^aF
• Low ^•C^Ela^pm^oxp^yin^:g^UV^L9o⁴lt^-a^Vg⁰e^{rated flame retardant}
1
SOD– 523
0.040(1.0)
0.024(0.6)
• Smal^•l B^Cao^sd^ey^:O^Mu^ot^ll^din^ee^d D^pli^am^steⁱn^c,si^So^On^Ds:^-123H
0.0•4T7e″rmx
i0n.a0l3s2:P″ l(a1t.e2d0temrmminxa0ls.,8s0omldmer)able
per
MI
L-
,
STD-750
• Low Body HeighMt:e0t.h0o2d42″0(206.6 mm)
• Stand_•−_Po_off_laV_rio_tylt_:a_Ig_ne_d:_ic5_aV_{ted by cathode band}
• Low _•L_Mea_ok_ua_ng_te_{ing Position : Any}
•
•
Resp_•on_Wse_eiT_ghim_{t :}e_Ai_ps_pT_roy_xp_ii_mca_al_tl_ey_d<_0.1₀.₁0₁n_gs_ram
IEC61000−4−2 Level 4 ESD Protection
0.031(0.8) Typ.
0.031(0.8) Typ.
1
2
Dimensions in inches and (millimeters)
PIN 1. CATHODE
2. ANODE
• This is a Pb−MFrAeeXDIMevUiMce RATINGS AND ELECTRICAL CHARACTERISTICS
•_RaP_tb_in-_gF_sre_ae_{t 2}p₅a_℃cka_ag_me_bi_ies_na_tv_tea_mila_pb_el_re_{ature unless otherwise specified.}
Ordering information
Si^Rng^ol^He^Sph^pa^rs^oe^duh^ca^tlf^fow^ra^pv^ae^c, ^k6ⁱ0ⁿH^gz^c,^or^des^eis^st^uiv^fe^fixo^”f^Gin^”ductive load.
Device
Marking
Shipping
Fo^Hr^ac^la^op^ga^ecⁿit^fiv^ree^elo^pa^rd^o,^dd^ue^cr^ta^ft^oe^rc^pu^ar^cre^knⁱⁿt ^gby^co2^d0^e%^{suffix “H”}
Mechanical CharactReAriTsItNicGsS:
SESD5L5.0T1
5L
3000/Tape&Reel
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
C_MA_aS_rkE_in:_gV_Co_oi_dd_e-free, transfer-molded, thermosetting plastic ₁₂
13
14
15
16
18
10
115 120
EMpaoxximyuMmeReetcsuUrreLnt9P4eaVk−R0everse Voltage
VRRM
20
30
40
50
60
80
100
150
200
L_ME_aA_xD_imuF_mIN_RIS_MH_S :_V1_ol0_ta0_g%_e Matte Sn (Tin)
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
QUALIFIED MAX REFLOW TEMPERATURE:
D^Me^av^xiⁱc^me^umM^Ae^ve^ets^raM^geS^FL^orw1^aR^rde^Rq^eu^ci^trⁱe^fiem^de^Cn^ut^rs^rent
260_IO°C
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
30
s_Mup_Ae_Xrim_IMpo_Use_Md o_Rn_Ara_Tte_INd _Gloa_Sd (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
Typical Junction Ca^Rp^aa^tcⁱⁿita^gnce (Note 1)
Symbol _CJ Value
Unit
120
O^Ip^Ee^Cra⁶ti¹n⁰g⁰T⁰e^−m⁴p^−e²ra^(Etu^Sre^DR⁾ ange
Storage Temperature Range
Contact
Air
TJ ^±10
TSTG ^±15
-5k5Vto +125
-55 to +150
- 65 to +175
Total Power Dissipation on FR−5 Board
(Note 1) @ T_A =_C2_H5_A°_RC_ACTERISTICS
°P_D°
200
mW
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
M_Sa_tx_oim_rau_gm_e F_Teor_mw_pa_erd_raV_tuo_rlt_eag_Re_aa_nt_g1_e.0A DC
T_stg VF−55 to +150 °C 0.50
0.70
0.85
0.9
0.92
M_Ja_ux_nim_ctu_iom_nA_Tv_ee_mra_pg_ee_raR_tuev_reer_Rse_anC_gu_errent at @T A=25℃_TJ
IR^{−55 to +125 °C}
0.5
R_La_ete_ad_dD_SC_olB_dl_eo_rck_Ti_en_mg _pV_eo_rlt_aa_tg_ue_{re − Maximum}@T A=125℃_TL
260
°C
10
(10 Second Duration)
NOTES:
1-PMeeaaksuPrueldseatC1uMrrHeZntand applied reverse voltage of 4I_P.0_PVDC. _5(Max)
A
2- T⁸h^xer²m⁰a^ml R^se^es^cis^. tance From Junction to Ambient
Peak Power Dissipation
8 x 20 ^m sec.
P_pk
50(Max) W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.