WTC2301 Datasheet, PDF (5/6 Pages) Weitron Technology – P-Channel Enhancement Mode Power MOSFET

WTC2301
5
I_D = -2.8A
4
V_DS = -6V
3
2
f = 1.0MHz
1000
Ciss
100
Coss
1
Crss
0
0
2
4
6
Q_G , Total Gate Charge(nC)
Fig 7. Gate Charge Characteristics
0
1
3
5
7
9
11
13
-V_DS, Drain-to-Source Voltage(V)
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor = 0.5
10
1ms
1
10ms
0.1
T_A = 25°C
Single Pulse
0.01
0.1
1
10
V_DS , Drain-to-Source Voltage(V)
100ms
Is
DC
100
Fig 9. Maximum Safe Operation Area
0.2
0.1
0.1
0.05
0.01
0.01
Single pulse
P_DM
t
T
Duty factor = t / T
Peak Tj=P_DM x R_Вju + T_u
R_Вja=270°C / W
0.001
0.0001
0.001
0.01
0.1
1
10
t, Pulse Width(s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 11. Switching Time Circuit
VG
-5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig.12 Gate Charge Waveform
WEITRON
5/6
http://www.weitron.com.tw
12-May-05