WTC2301 Datasheet, PDF (1/6 Pages) Weitron Technology – P-Channel Enhancement Mode Power MOSFET

P-Channel Enhancement
Mode Power MOSFET
3 DRAIN
P b Lead(Pb)-Free
1
GATE
Features:
*Super High Dense Cell Design For Low R_DS(ON)
R _DS(ON) <130mΩ@V _GS =12V
*Rugged and Reliable
*Capable of 2.5V Gate Drive
*Simple Drive Requirement
*SOT-23 Package
2
SOURCE
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System
WTC2301
DRAIN CURRENT
-2.6 AMPERES
DRAIN SOURCE VOLTAGE
-20 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(T_A=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_{G S}
Con tinuous Drain Current ³ ,V_GS @12V(T_A
I_D
,V_GS @12V(T_A
Pulsed Drain Current ^1,2
I_DM
Total Po wer Dis sipation(T A=25˚C)
P_D
Maximum Junction-ambient ³
R _θJA
Operating Junction and Storage Temperature Range
T_J, T _stg
Value
20
±12
-2.6
-2.1
- 10
1.38
90
-55~+150
Unit
V
A
W
˚C /W
˚C
Device Marking
WTC2301=2301
WEITRON
http:www.weitron.com.tw
1/6
12-May-05