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| BAS516 Datasheet, PDF (4/4 Pages) NXP Semiconductors – High-speed diode | |||
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BAS516
Typical Characteristics
RS = 50 â¦
V = VR IF x R S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R i = 50 â¦
VR
tr
tp
10%
90%
input signal
t
IF
t rr
t
(1)
output signal
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time tr = 0.35 ns.
Fig. 6 Reverse recovery voltage test circuit and waveforms
WEITRON
4/4
http://www.weitron.com.tw
06-Jan-06
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