 English |
|
|
|
|
|
|
|
| BAS516 Datasheet, PDF (2/4 Pages) NXP Semiconductors – High-speed diode | |||
| |||
| ◁ |
BAS516
Maximum Ratings (TA=25ËC Unless otherwise noted)
Characteristic
Symbol
Value
Unit
DCReverseVoltage
VR
75
V
Mean Rectifying Current
IO
250
mA
Peak Forward Surge Current @t=1s
IFSM
500
mA
Operating Junction Temperature Range
TJ
Storage Temperature Range
Tstg
+150
ËC
-65 to +150
ËC
Electrical Characteristics (TA=25ËC Unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Forward Voltage
IF=1mA
IF=10mA
IF=50mA
IF=150mA
Reverse Current
VR=25V
VR=75V
Capacitance Between Terminals
VR=0,f=1MHz
Reverse Recovery Time
IF = 10 mA , IR = 10 mA, RL = 100Ω
Measured at IR = 1mA; see Fig.6
VF1
-
VF2
-
VF3
-
VF4
-
IR1
-
IR2
-
CT
-
Trr
-
-
0.715
-
0.855
V
-
1.0
-
1.25
-
-
0.03
1.0
µA
-
1.0
pF
-
4.0
ns
Device Marking
Item
BAS516
Marking
6 , 61
Eqivalent Circuitdiagram
1
2
WEITRON
2/4
http://www.weitron.com.tw
06-Jan-06
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese