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WTD1386 Datasheet, PDF (3/4 Pages) Weitron Technology – PNP EPITAXIAL PLANAR TRANSISTOR
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WTD1386
1000
hFE@VCE=2V
100
1
10
100
1000
10000
Collector Current-IC (mA)
Fig.1 Current Gain & Collector Current
10000
1000
100
VCE(sat)@IC=20IB
10
VCE(sat)@IC=40IB
1
1
10
100
1000
10000
Collector Current-IC (mA)
Fig.2 Saturation Voltage & Collector Current
1000
1000
VBE(sat)@IC=20IB
1
1
10
100
1000
10000
Collector Current-IC (mA)
Fig.3 Saturation Voltage & Collector Current
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Power Derating
Fig.5 TC(˚C), Ambient Temperature
100
Cob
1
0.1
1
10
100
Reverse Biased Voltage (V)
Fig.4 Capacitance & Reverse-Biased Voltage
10
1
PT=1mS
PT=100mS
PT=1S
0.1
0.01
1
10
100
Forward Voltage (V)
Fig.6 Safe Operating Area
WEITRON
3/4
http://www.weitron.com.tw
09-Sep-05
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